GeneSiC Semiconductor introduces their Silicon Carbide Power Schottky diodes. This product promotes improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance and low reverse leakage current at operating temperatures. The two products offer at 1200 V in a TO-252 package, and provide 2 A at 26 nC, as well as 5 A at 35 nC.