With ultra-low RDS(ON), Toshiba's 600 V DTMOSIV Superjunction (SJ) MOSFETs are ideal switching devices for switching power supplies, micro inverters, adaptors, photovoltaic inverters and other power applications that demand a combination of high-speed, high-efficiency and low EMI noise.
Superjunction MOSFETs offer ultra-low on resistance without power loss penalties. As a result, Toshiba's new DTMOSIV process, which is being deployed in the company's latest family of high-speed, high-efficiency 600 V power MOSFETs, offers on-resistance ratings that are up to 30 percent lower than third-generation DTMOS products for the same die size.
The benefit is that designers can now choose a 600 V MOSFET in a TO-220SIS package with an RDS(ON) of just 0.065 Ω, or a similar device in a TO-247 package with an RDS(ON) down to 0.04 Ω.
In addition to driving down on resistance, the DTMOSIV process has allowed Toshiba to minimize MOSFET output capacitance (Coss) for optimized switching power supply operation at light load. An optimized gate-drain capacitance (Cgd) delivers improved DV/DT switching control, while an optimized RDS(ON)*Qg figure of merit supports high-efficiency switching. By supporting lower DV/DT ratings, DTMOSIV also reduces EMI noise in high-speed switching circuitry.