The SiHH068N60E is the latest device in Vishay's fourth-generation of 600 V E series power MOSFETs. Providing high efficiency for telecom, industrial, and enterprise power supply applications, the Vishay Siliconix N-channel SiHH068N60E is currently the industry’s lowest gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications. Built on Vishay's latest energy-efficient E series superjunction technology, this device slashes on-resistance by 27 percent compared with previous generation 600 V E series MOSFETs, while delivering 60 percent lower gate charge. FOM of 3.1 Ω*nC is 12 percent lower than the closest competing MOSFET in the same class.