Diodes' DGD2003, DGD2005, and DGD2012 feature both high-side and low-side output drive capability with simple logic level input enabling an easy interface between the MCU and the power MOSFET switches. Supporting up to 200 V via a floating high side suits a wide range of motor driving in battery-operated applications. These gate drivers encompass self-protection features such as dead-time and matched delays to evade shoot-through issues, Schmitt triggered inputs to avoid false triggering, gate drive tolerance to negative transients caused during high dv/dt switching, and undervoltage lockout (UVLO) protection on the VCC and VBS supplies to avoid malfunction under low supply voltage.
Features
- Source and sink currents (0.29 A, 0.6 A DGD2003/5; 1.9 A, 2.3 A DGDG2012) increasing system efficiencies by minimizing switching time of power MOSFETs
- Logic level input > 2.5 V PWM control directly from 3.3 V MCU while the output steps up to the VCC supply (8 V to 14 V) to ensure the MOSFET is fully enhanced to reduce losses
- Shoot-through prevention logic to protect the MOSFET from shoot-through, these gate drivers have matched delays
- SO-8 footprint standard package and pinout for ease of use
Applications
- Motor drive – brushless DC (BLDC) motor driving up to 200 V, especially in battery operated applications:
- Cordless power tools, garden tools, and domestic appliances
- Light electric vehicles (LEVs)
- Robotics
- Drones
- Power conversion