SIHG33N60E-GE3

SIHG33N60E-GE3
Mfr. #:
SIHG33N60E-GE3
制造商:
Vishay
描述:
Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
生命周期:
制造商新产品。
数据表:
SIHG33N60E-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
威世
产品分类
FET - 单
系列
E
打包
管子
单位重量
1.340411 oz
安装方式
通孔
商品名
E系列
包装盒
TO-247-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
278 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
80 ns
上升时间
90 ns
VGS-栅极-源极-电压
4 V
Id 连续漏极电流
33 A
Vds-漏-源-击穿电压
600 V
VGS-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Resistance
99 mOhms
晶体管极性
N通道
典型关断延迟时间
150 ns
典型开启延迟时间
56 ns
Qg-门电荷
150 nC
正向跨导最小值
11 S
Tags
SIHG33N60E-GE, SIHG33N60E-G, SIHG33N60, SIHG33, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin TO-247AC
***ure Electronics
NO LONGER IN COSTBOOK-POSSIBLE REG-CONTACT ENG. OPS/BDA.
***ment14 APAC
MOSFET, N CH, 600V, 33A, TO-247AC-3
***i-Key
MOSFET N-CH 600V 33A TO-247AC
***
N-CH 600V TO-247
***ark
MOSFET, N CH, 600V, 33A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:278W; MSL:- ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 600V, 33A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:278W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
型号 制造商 描述 库存 价格
SIHG33N60E-GE3
DISTI # V99:2348_09219046
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant
234
  • 500:$3.8130
  • 250:$4.4010
  • 100:$4.7110
  • 10:$5.6510
  • 1:$6.3150
SIHG33N60E-GE3
DISTI # SIHG33N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 33A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
172In Stock
  • 100:$5.4120
  • 10:$6.6000
  • 1:$7.3900
SIHG33N60E-GE3
DISTI # 30341183
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant
234
  • 100:$4.7110
  • 10:$5.6510
  • 2:$6.3150
SIHG33N60E-GE3
DISTI # SIHG33N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG33N60E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$3.3900
  • 1000:$3.2900
  • 2000:$3.1900
  • 3000:$3.0900
  • 5000:$2.9900
SIHG33N60E-GE3
DISTI # 68W7053
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin TO-247AC - Product that comes on tape, but is not reeled (Alt: 68W7053)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$8.0800
  • 10:$6.6800
  • 25:$6.2900
  • 50:$5.9000
  • 100:$5.5100
  • 250:$5.3400
SIHG33N60E-GE3
DISTI # 68W7053
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AC-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,MSL:- RoHS Compliant: Yes36
  • 1:$8.0800
  • 10:$6.6800
  • 25:$6.2900
  • 50:$5.9000
  • 100:$5.5100
  • 250:$5.3400
SIHG33N60E-GE3
DISTI # 68W7054
Vishay IntertechnologiesMOSFET, N CH, 600V, 33A, TO-247AC-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1:$3.7700
  • 2000:$3.6000
  • 4000:$3.3600
  • 8000:$3.1200
  • 12000:$3.0000
  • 20000:$2.9600
SIHG33N60E-GE3
DISTI # 78-SIHG33N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant
50
  • 1:$6.7300
  • 10:$5.5700
  • 100:$4.5900
  • 250:$4.4500
  • 500:$4.0000
SIHG33N60E-E3
DISTI # 78-SIHG33N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant
0
  • 500:$3.9400
  • 1000:$3.3200
  • 2500:$3.1600
SIHG33N60E-GE3Vishay IntertechnologiesE-Series N-Channel 600 V 278 W 99 mO 150 nC Flange Mount Power Mosfet - TO-247AC
RoHS: Compliant
784Bulk
  • 2:$6.3300
  • 20:$5.7400
  • 100:$4.9400
SIHG33N60E-GE3Vishay Intertechnologies 500
    SIHG33N60EGE3Vishay Siliconix 
    RoHS: Not Compliant
    Europe - 100
      SIHG33N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
      RoHS: Compliant
      Europe - 400
        SIHG33N60E-GE3
        DISTI # 2291550
        Vishay IntertechnologiesMOSFET, N CH, 600V, 33A, TO-247AC
        RoHS: Compliant
        582
        • 1:$10.6500
        • 10:$8.8100
        • 100:$7.2700
        • 250:$7.0500
        • 500:$6.3400
        SIHG33N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
        RoHS: Compliant
        Americas - 400
          SIHG33N60E-GE3
          DISTI # 2291550
          Vishay IntertechnologiesMOSFET, N CH, 600V, 33A, TO-247AC
          RoHS: Compliant
          585
          • 1:£6.2700
          • 10:£4.4800
          • 100:£3.7000
          • 250:£3.5800
          • 500:£3.2300
          SIHG33N60E-GE3
          DISTI # C1S803601988195
          Vishay IntertechnologiesMOSFETs
          RoHS: Compliant
          234
          • 100:$4.7110
          • 10:$5.6510
          • 1:$6.3150
          图片 型号 描述
          SIHG33N60EF-GE3

          Mfr.#: SIHG33N60EF-GE3

          OMO.#: OMO-SIHG33N60EF-GE3

          MOSFET 600V Vds 30V Vgs TO-247AC
          SIHG33N65E-GE3

          Mfr.#: SIHG33N65E-GE3

          OMO.#: OMO-SIHG33N65E-GE3

          MOSFET 650V Vds 30V Vgs TO-247AC
          SIHG33N60E-E3

          Mfr.#: SIHG33N60E-E3

          OMO.#: OMO-SIHG33N60E-E3

          MOSFET 600V Vds 30V Vgs TO-247AC
          SIHG33N60E-GE3

          Mfr.#: SIHG33N60E-GE3

          OMO.#: OMO-SIHG33N60E-GE3

          MOSFET 600V Vds 30V Vgs TO-247AC
          SIHG33N60E-GE3

          Mfr.#: SIHG33N60E-GE3

          OMO.#: OMO-SIHG33N60E-GE3-VISHAY

          Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
          SIHG33N60E-E3

          Mfr.#: SIHG33N60E-E3

          OMO.#: OMO-SIHG33N60E-E3-VISHAY

          MOSFET N-CH 600V 33A TO247AC
          SIHG33N60E

          Mfr.#: SIHG33N60E

          OMO.#: OMO-SIHG33N60E-1190

          全新原装
          SIHG33N60E-G3

          Mfr.#: SIHG33N60E-G3

          OMO.#: OMO-SIHG33N60E-G3-1190

          全新原装
          SIHG33N60E-GE3,G33N60E,

          Mfr.#: SIHG33N60E-GE3,G33N60E,

          OMO.#: OMO-SIHG33N60E-GE3-G33N60E--1190

          全新原装
          SIHG33N60E-GE3,SIHG33N60

          Mfr.#: SIHG33N60E-GE3,SIHG33N60

          OMO.#: OMO-SIHG33N60E-GE3-SIHG33N60-1190

          全新原装
          可用性
          库存:
          Available
          订购:
          4000
          输入数量:
          SIHG33N60E-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格(美元)
          数量
          单价
          小计金额
          1
          US$4.24
          US$4.24
          10
          US$4.03
          US$40.32
          100
          US$3.82
          US$381.99
          500
          US$3.61
          US$1 803.85
          1000
          US$3.40
          US$3 395.50
          由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
          从...开始
          Top