IPB60R060C7ATMA1

Mfr. #:: IPB60R060C7ATMA1
制造商:: Infineon Technologies
描述:: MOSFET N-CH 650V 35A TO263-3
生命周期:: 制造商新产品。
数据表:: IPB60R060C7ATMA1 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: IPB60R060C7ATMA1 更多信息

产品属性
属性值

Tags: IPB60R0, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R060C7ATMA1 更多信息

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

型号	制造商	描述	库存	价格
IPB60R060C7ATMA1 DISTI # IPB60R060C7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 35A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	760In Stock	500:$5.2481 100:$6.2638 10:$7.6180 1:$8.4600
IPB60R060C7ATMA1 DISTI # IPB60R060C7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 35A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	760In Stock	500:$5.2481 100:$6.2638 10:$7.6180 1:$8.4600
IPB60R060C7ATMA1 DISTI # IPB60R060C7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 35A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$4.4378
IPB60R060C7ATMA1 DISTI # IPB60R060C7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW - Tape and Reel (Alt: IPB60R060C7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$4.2900 2000:$4.0900 4000:$3.9900 6000:$3.7900 10000:$3.6900
IPB60R060C7ATMA1 DISTI # SP001385008	Infineon Technologies AG	MOSFET HIGH POWER_NEW (Alt: SP001385008) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€4.0900 2000:€3.8900 4000:€3.7900 6000:€3.4900 10000:€3.2900
IPB60R060C7ATMA1 DISTI # IPB60R060C7	Infineon Technologies AG	MOSFET HIGH POWER_NEW (Alt: IPB60R060C7) RoHS: Compliant Min Qty: 1000	Asia - 0	1000:$4.2691 2000:$4.1506 3000:$4.0384 5000:$3.9321 10000:$3.8810 25000:$3.8313 50000:$3.7828
IPB60R060C7ATMA1 DISTI # 93AC7104	Infineon Technologies AG	MOSFET, N-CH, 600V, 35A, 162W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.052ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	1000	500:$3.7000 250:$4.0600 100:$4.2600 50:$4.5800 25:$4.9000 10:$5.1400 1:$5.6800
IPB60R060C7ATMA1 DISTI # 726-IPB60R060C7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	813	1:$7.1000 10:$6.4200 25:$6.1200 100:$5.3200 250:$5.0800 500:$4.6300 1000:$4.0300 2000:$3.8800
IPB60R060C7ATMA1 DISTI # 2986356	Infineon Technologies AG	MOSFET, N-CH, 600V, 35A, 162W, TO-263 RoHS: Compliant	1000	100:£4.2400 50:£4.5800 10:£4.9200 5:£5.6600 1:£6.1600
IPB60R060C7ATMA1 DISTI # 2986356	Infineon Technologies AG	MOSFET, N-CH, 600V, 35A, 162W, TO-263 RoHS: Compliant	1000	250:$5.8800 100:$7.6900 50:$8.2900 10:$8.8400 5:$10.0300 1:$10.9700

图片	型号	描述
	Mfr.#: IPB60R060P7ATMA1 OMO.#: OMO-IPB60R060P7ATMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPB60R060C7ATMA1 OMO.#: OMO-IPB60R060C7ATMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPB60R060C7ATMA1 OMO.#: OMO-IPB60R060C7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 35A TO263-3
	Mfr.#: IPB60R060P7ATMA1 OMO.#: OMO-IPB60R060P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3

IPB60R060C7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes