SIHB12N60E-GE3

SIHB12N60E-GE3
Mfr. #:
SIHB12N60E-GE3
制造商:
Vishay
描述:
Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
生命周期:
制造商新产品。
数据表:
SIHB12N60E-GE3 数据表
交货:
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ECAD Model:
更多信息:
SIHB12N60E-GE3 更多信息
产品属性
属性值
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHB12N60E-GE3
DISTI # V36:1790_09219014
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9136
  • 500000:$0.9150
  • 100000:$0.9941
  • 10000:$1.1110
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # V99:2348_09219014
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9821
  • 500000:$0.9833
  • 100000:$1.0390
  • 10000:$1.1180
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk
146In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8590
  • 6000:$0.8827
  • 4000:$0.9079
  • 2000:$0.9463
  • 1000:$0.9753
SIHB12N60E-GE3
DISTI # 68W7031
Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7031)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.1800
SIHB12N60E-GE3
DISTI # 68W7031
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 12A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant
322
  • 100:$1.0300
  • 250:$1.0300
  • 500:$1.0300
  • 25:$1.1200
  • 50:$1.1200
  • 1:$1.2200
  • 10:$1.2200
SIHB12N60E-GE3
DISTI # 68W7032
Vishay IntertechnologiesMOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant
0
  • 10000:$0.8380
  • 6000:$0.8710
  • 4000:$0.9050
  • 2000:$1.0100
  • 1000:$1.0600
  • 1:$1.1300
SIHB12N60E-GE3
DISTI # 78-SIHB12N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
840
  • 1:$1.9800
  • 10:$1.7400
  • 100:$1.3700
  • 500:$1.1700
  • 1000:$0.9710
  • 2000:$0.9040
  • 5000:$0.8910
SIHB12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
    SIHB12N60E-GE3
    DISTI # 1451818
    Vishay IntertechnologiesIn a Tube of 50, SIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, TU
    Min Qty: 50
    Container: Tube
    0
    • 50:$0.6980
    SIHB12N60E-GE3
    DISTI # 7689300
    Vishay IntertechnologiesSIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, EA
    Min Qty: 1
    Container: Bulk
    671
    • 1:$0.7150
    SIHB12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    Europe - 900
      SIHB12N60E-GE3
      DISTI # 2364071
      Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant
      1165
      • 5000:£0.7190
      • 1000:£0.7450
      • 500:£0.9630
      • 250:£1.0300
      • 100:£1.1000
      • 10:£1.4300
      • 1:£1.9500
      SIHB12N60E-GE3
      DISTI # 2364071
      Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant
      1160
      • 5000:$1.3700
      • 2500:$1.4300
      • 1000:$1.5300
      • 500:$1.8500
      • 100:$2.2500
      • 10:$2.7900
      • 1:$3.1100
      图片 型号 描述
      SIHB12N65E-GE3

      Mfr.#: SIHB12N65E-GE3

      OMO.#: OMO-SIHB12N65E-GE3

      MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
      SIHB12N50C-E3

      Mfr.#: SIHB12N50C-E3

      OMO.#: OMO-SIHB12N50C-E3

      MOSFET N-Channel 500V
      SIHB12N60ET5-GE3

      Mfr.#: SIHB12N60ET5-GE3

      OMO.#: OMO-SIHB12N60ET5-GE3

      MOSFET N-Channel 600V
      SIHB12N60E-GE3

      Mfr.#: SIHB12N60E-GE3

      OMO.#: OMO-SIHB12N60E-GE3-VISHAY

      Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
      SIHB12N65E-GE3

      Mfr.#: SIHB12N65E-GE3

      OMO.#: OMO-SIHB12N65E-GE3-VISHAY

      IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
      SIHB12N50E-GE3

      Mfr.#: SIHB12N50E-GE3

      OMO.#: OMO-SIHB12N50E-GE3-VISHAY

      IGBT Transistors MOSFET N-Channel 500V
      SIHB12N50C

      Mfr.#: SIHB12N50C

      OMO.#: OMO-SIHB12N50C-1190

      全新原装
      SIHB12N60E

      Mfr.#: SIHB12N60E

      OMO.#: OMO-SIHB12N60E-1190

      全新原装
      SIHB12N60EGE3

      Mfr.#: SIHB12N60EGE3

      OMO.#: OMO-SIHB12N60EGE3-1190

      Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      SIHB12N60ET1-GE3

      Mfr.#: SIHB12N60ET1-GE3

      OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

      MOSFET N-CH 600V 12A TO263
      可用性
      库存:
      Available
      订购:
      1000
      输入数量:
      SIHB12N60E-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$1.12
      US$1.12
      10
      US$1.06
      US$10.62
      100
      US$1.01
      US$100.58
      500
      US$0.95
      US$474.95
      1000
      US$0.89
      US$894.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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