SI7962DP-T1-E3

SI7962DP-T1-E3
Mfr. #:
SI7962DP-T1-E3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
生命周期:
制造商新产品。
数据表:
SI7962DP-T1-E3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
威世硅
产品分类
FET - 阵列
系列
沟槽FETR
打包
Digi-ReelR 替代包装
部分别名
SI7962DP-E3
单位重量
0.017870 oz
安装方式
贴片/贴片
包装盒
PowerPAKR SO-8 Dual
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
2 Channel
供应商-设备-包
PowerPAKR SO-8 Dual
配置
双重的
FET型
2 N-Channel (Dual)
最大功率
1.4W
晶体管型
2 N-Channel
漏源电压 Vdss
40V
输入电容-Ciss-Vds
-
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
7.1A
Rds-On-Max-Id-Vgs
17 mOhm @ 11.1A, 10V
Vgs-th-Max-Id
4.5V @ 250μA
栅极电荷-Qg-Vgs
70nC @ 10V
钯功耗
1.4 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
15 ns
上升时间
15 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
7.1 A
Vds-漏-源-击穿电压
40 V
Rds-On-Drain-Source-Resistance
17 mOhms
晶体管极性
N通道
典型关断延迟时间
55 ns
典型开启延迟时间
22 ns
通道模式
增强
Tags
SI7962, SI796, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 40V 7.1A PPAK SO-8
***ark
Transistor; Continuous Drain Current, Id:11100mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4.5V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SI7962DP-T1-E3
DISTI # SI7962DP-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 40V 7.1A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8873
SI7962DP-T1-E3
DISTI # 781-SI7962DP-T1-E3
Vishay IntertechnologiesMOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
RoHS: Compliant
0
  • 3000:$1.7200
图片 型号 描述
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3

MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3

MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3-317

RF Bipolar Transistors MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3-VISHAY

RF Bipolar Transistors MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
可用性
库存:
Available
订购:
3000
输入数量:
SI7962DP-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$2.58
US$2.58
10
US$2.45
US$24.51
100
US$2.32
US$232.20
500
US$2.19
US$1 096.50
1000
US$2.06
US$2 064.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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