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BSC031N06NS3GATMA1

BSC031N06NS3GATMA1
Mfr. #:
BSC031N06NS3GATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-CH 60V 100A TDSON-8
生命周期:
制造商新产品。
数据表:
BSC031N06NS3GATMA1 数据表
交货:
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ECAD Model:
产品属性
属性值
Tags
BSC031N06NS3G, BSC031, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 3.1 mOhm 98 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ineon SCT
60V, N-Ch, 2.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) TO-263 T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ical
Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R
***ment14 APAC
MOSFET, N-CH, 60V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 74W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***et
Trans MOSFET N-CH 60V 100A 7-Pin(6+Tab) TO-263
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***nell
MOSFET, N CH, 100A, 60V, PG-TO263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 167W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 100A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
*** Electronics
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin Power 56 ON Semiconductor FDMS030N06B
***ure Electronics
Single N-Channel 60 V 3 mOhm 75 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 22.1A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ
***ow.cn
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 110A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
60V, 100A, 3.1mohm, N-Channel, PowerDI5060-8, Enhancement Mode Mosfet
***des Inc SCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ical
Trans MOSFET N-CH 60V 22A 8-Pin PowerDI EP T/R
***et
MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K
***ronik
N-CH 60V 100A 3,1mOhm PwDI5060
***el Electronic
MOSFET N-CH 60V 22A PWRDI5060-8
***ark
MOSFET, AEC-Q101, N-CH, 100A, 60V; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
型号 制造商 描述 库存 价格
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9743
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.1193
  • 500:$1.3508
  • 100:$1.7368
  • 10:$2.1610
  • 1:$2.3900
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.1193
  • 500:$1.3508
  • 100:$1.7368
  • 10:$2.1610
  • 1:$2.3900
BSC031N06NS3GXT
DISTI # BSC031N06NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7849
  • 10000:$0.7559
  • 20000:$0.7289
  • 30000:$0.7049
  • 50000:$0.6919
BSC031N06NS3GATMA1
DISTI # 85X4151		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 139W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$2.0100
  • 10:$1.7100
  • 25:$1.6000
  • 50:$1.4800
  • 100:$1.3700
  • 250:$1.2900
  • 500:$1.2000
  • 1000:$0.9880
BSC031N06NS3 G
DISTI # 726-BSC031N06NS3G		Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$2.0100
  • 10:$1.7100
  • 100:$1.3700
  • 500:$1.2000
  • 1000:$0.9880
BSC031N06NS3GATMA1
DISTI # 7545257P		Infineon Technologies AGMOSFET N-CHANNEL 60V 100A TDSON8, RL1
  • 50:£1.1250
  • 250:£0.8500
  • 1250:£0.6500
  • 2500:£0.6100
BSC031N06NS3GATMA1
DISTI # 2443369		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$3.1900
  • 10:$2.7100
  • 100:$2.1700
  • 500:$1.9100
  • 1000:$1.7500
BSC031N06NS3GATMA1
DISTI # 2443369RL		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$3.1900
  • 10:$2.7100
  • 100:$2.1700
  • 500:$1.9100
  • 1000:$1.7500
BSC031N06NS3GATMA1
DISTI # 2443369		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
RoHS: Compliant		90
  • 1:£1.1300
  • 10:£0.8960
  • 100:£0.7710
图片 型号 描述
BSC031N06NS3 G

Mfr.#: BSC031N06NS3 G

OMO.#: OMO-BSC031N06NS3-G

 MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
BSC031N06NS3

Mfr.#: BSC031N06NS3

OMO.#: OMO-BSC031N06NS3-1190

 全新原装
BSC031N06NS3 G

Mfr.#: BSC031N06NS3 G

OMO.#: OMO-BSC031N06NS3-G-1190

 Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
BSC031N06NS3G

Mfr.#: BSC031N06NS3G

OMO.#: OMO-BSC031N06NS3G-1190

 Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC031N06NS3GATMA1

Mfr.#: BSC031N06NS3GATMA1

OMO.#: OMO-BSC031N06NS3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 100A TDSON-8
BSC031N06NS3GATMA1 , TDA

Mfr.#: BSC031N06NS3GATMA1 , TDA

OMO.#: OMO-BSC031N06NS3GATMA1-TDA-1190

 全新原装
可用性
库存:
Available
订购:
2500
输入数量:
BSC031N06NS3GATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.46
US$1.46
10
US$1.39
US$13.88
100
US$1.32
US$131.53
500
US$1.24
US$621.10
1000
US$1.17
US$1 169.10
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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