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S25FL512SAGBHM213

S25FL512SAGBHM213
Mfr. #:
S25FL512SAGBHM213
制造商:
Cypress Semiconductor
描述:
NOR Flash IC 512 Mb FLASH MEMORY
生命周期:
制造商新产品。
数据表:
S25FL512SAGBHM213 数据表
交货:
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ECAD Model:
更多信息:
S25FL512SAGBHM213 更多信息 S25FL512SAGBHM213 Product Details
产品属性
属性值
制造商：
赛普拉斯半导体
产品分类：
NOR闪存
RoHS：
Y
系列：
S25FL512S
资质：
AEC-Q100
打包：
卷轴
内存类型：
也不
品牌：
赛普拉斯半导体
湿气敏感：
是的
产品类别：
NOR闪存
出厂包装数量：
2500
子类别：
内存和数据存储
商品名：
镜像位
Tags
S25FL512SAGBH, S25FL512SAGB, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC 512 MB FLASH MEMORY
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
型号 制造商 描述 库存 价格
S25FL512SAGBHM213
DISTI # V36:1790_18759860		Cypress SemiconductorIC 512 Mb FLASH MEMORY0
  • 2500000:$7.4170
  • 1250000:$7.4200
  • 250000:$7.6260
  • 25000:$7.9800
  • 2500:$8.0390
S25FL512SAGBHM213
DISTI # S25FL512SAGBHM213-ND		Cypress SemiconductorIC 512 MB FLASH MEMORY
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$8.0389
S25FL512SAGBHM213
DISTI # 47AC6133		Cypress SemiconductorS25FL512SAGBHM2130
  • 1200:$7.2900
  • 800:$7.6500
  • 400:$7.9000
  • 200:$8.1400
  • 1:$8.5700
S25FL512SAGBHM213
DISTI # 727-S25FL512SAGBHM23		Cypress SemiconductorNOR Flash IC 512 Mb FLASH MEMORY
RoHS: Compliant		0
  • 2500:$8.1400
图片 型号 描述
S25FL512SAGMFA011

Mfr.#: S25FL512SAGMFA011

OMO.#: OMO-S25FL512SAGMFA011

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S25FL512SAGBHIC10

Mfr.#: S25FL512SAGBHIC10

OMO.#: OMO-S25FL512SAGBHIC10

 NOR Flash 512Mb 3V 133MHz Serial NOR Flash
S25FL512SAGBHBC13

Mfr.#: S25FL512SAGBHBC13

OMO.#: OMO-S25FL512SAGBHBC13

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S25FL512SAGBHBB13

Mfr.#: S25FL512SAGBHBB13

OMO.#: OMO-S25FL512SAGBHBB13

 NOR Flash Nor
S25FL512SAG-AEA13

Mfr.#: S25FL512SAG-AEA13

OMO.#: OMO-S25FL512SAG-AEA13

 NOR Flash
S25FL512SDSMFBG11

Mfr.#: S25FL512SDSMFBG11

OMO.#: OMO-S25FL512SDSMFBG11-CYPRESS-SEMICONDUCTOR

 Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
S25FL512SDPMFV011

Mfr.#: S25FL512SDPMFV011

OMO.#: OMO-S25FL512SDPMFV011-CYPRESS-SEMICONDUCTOR

 Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TUBE PACKING
S25FL512SDPBHV210

Mfr.#: S25FL512SDPBHV210

OMO.#: OMO-S25FL512SDPBHV210-CYPRESS-SEMICONDUCTOR

 IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SDPMFVG13

Mfr.#: S25FL512SDPMFVG13

OMO.#: OMO-S25FL512SDPMFVG13-CYPRESS-SEMICONDUCTOR

 Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO16-SO3016 IN T&R PACKING, WITH RESET#
S25FL512SAIFR11

Mfr.#: S25FL512SAIFR11

OMO.#: OMO-S25FL512SAIFR11-1190

 全新原装
可用性
库存:
Available
订购:
3000
输入数量:
S25FL512SAGBHM213的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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