S29GL512T10FHI010

Mfr. #:: S29GL512T10FHI010
制造商:: Cypress Semiconductor
描述:: IC FLASH 512M PARALLEL 64FBGA GL-T
生命周期:: 制造商新产品。
数据表:: S29GL512T10FHI010 数据表
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更多信息:: S29GL512T10FHI010 更多信息 S29GL512T10FHI010 Product Details

产品属性
属性值

制造商: 柏

产品分类: 记忆

系列: GL-T

打包: *

包装盒: *

工作温度: -40°C ~ 85°C (TA)

界面: 平行线

电压供应: 2.7 V ~ 3.6 V

供应商-设备-包: *

内存大小: 512M (64M x 8)

内存型: 闪存 - NOR

速度: 100ns

格式化内存: 闪光

Tags: S29GL512T10FH, S29GL512T10F, S29GL512T10, S29GL512T, S29GL5, S29GL, S29G, S29

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S29GL512T10FHI010 描述

***akorn: NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 64-Pin Fortified BGA Tray

***et Europe: NOR Flash Parallel 3V 512Mbit 64M/32M x 8bit/16bit 100ns 64-Pin FBGA Tray

***et: 512 MBIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FE

***i-Key: IC FLASH 512M PARALLEL 64FBGA

***Components: Cypress, S29GL512T10FHI010

***ark: Flash Memory, 512Mbit, 100Ns, Fbga-64; Flash Memory Type:parallel Nor; Memory Size:512Mbit; Flash Memory Configuration:64M X 8Bit; Ic Interface Type:parallel; Memory Case Style:fbga; No. Of Pins:64Pins; Clock Frequency:-; Access Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. FLASH MEMORY, 512MBIT, 100NS, FBGA-64; Flash Memory Type:Parallel NOR; Memory Size:512Mbit; Flash Memory Configuration:64M x 8bit; IC Interface Type:Parallel; Memory Case Style:FBGA; No. of Pins:64Pins; Clock Frequency:-; Access Time:100ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:3V Parallel NOR Flash Memories; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017)

***nell: MEMORIA FLASH, 512MBIT, 100NS, FBGA-64; Tipo di Memoria Flash:NOR Parallelo; Dimensione Memoria:512Mbit; Configurazione Memoria Flash:64M x 8bit; Tipo di Interfaccia CI:Parallela; Modello Case Memoria CI:FBGA; No. di Pin:64Pin; Frequenza di Clock:-; Tempo di Accesso:100ns; Tensione di Alimentazione Min:2.7V; Tensione di Alimentazione Max:3.6V; Temperatura di Esercizio Min:-40°C; Temperatura di Esercizio Max:85°C; Gamma Prodotti:3V Parallel NOR Flash Memories; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)

S29GL512T10FHI010 更多信息

MirrorBit® NOR GL Flash Memory Device: Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.

MirrorBit Eclipse Flash Memory: Cypress / S29GL512GT MirrorBit® Eclipse™ Flash Memory offers a fast page access time as fast as 15ns. It has a corresponding random access time as fast as 100ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.Learn More

Market price

型号	制造商	描述	库存	价格
S29GL512T10FHI010 DISTI # V36:1790_06276962	Cypress Semiconductor	HIGHEST ADDRESS SECTOR PROTECT RoHS: Compliant	213	1080:$5.2650 540:$5.5130 360:$6.1620 180:$6.3530 50:$6.9890 25:$7.1010 10:$7.2500 1:$7.8730
S29GL512T10FHI010 DISTI # V99:2348_06276962	Cypress Semiconductor	HIGHEST ADDRESS SECTOR PROTECT RoHS: Compliant	0	180000:$5.0160 90000:$5.0200 18000:$5.6030 1800:$6.7760 180:$6.9800
S29GL512T10FHI010 DISTI # 428-3613-ND	Cypress Semiconductor	IC FLASH 512M PARALLEL 64FBGA Min Qty: 1 Container: Tray	1604In Stock	1000:$5.6700 500:$5.8758 250:$6.1782 100:$6.3714 50:$7.1022 25:$7.1276 10:$7.2790 1:$7.9100
S29GL512T10FHI010 DISTI # 32738458	Cypress Semiconductor	HIGHEST ADDRESS SECTOR PROTECT RoHS: Compliant	213	1080:$5.2650 540:$5.5130 360:$6.1620 180:$6.3530 50:$6.9890 25:$7.1010 10:$7.2500 2:$7.8730
S29GL512T10FHI010 DISTI # 21092703	Cypress Semiconductor	HIGHEST ADDRESS SECTOR PROTECT RoHS: Compliant	60	1080:$5.6133 540:$5.8170 360:$6.1164 180:$6.3077 50:$7.0312 25:$7.0563 10:$7.2062 2:$7.8309
S29GL512T10FHI010 DISTI # 16AC3558	Cypress Semiconductor	FLASH MEMORY, 512MBIT, 100NS, FBGA-64,Flash Memory Type:Parallel NOR,Memory Size:512Mbit,Flash Memory Configuration:64M x 8bit,IC Interface Type:Parallel,Memory Case Style:FBGA,No. of Pins:64Pins,Clock Frequency:-,Access RoHS Compliant: Yes RoHS: Compliant	811	500:$5.8000 250:$6.6500 100:$7.2000 50:$7.6200 25:$8.0000 10:$8.8000 1:$9.6000
S29GL512T10FHI010 DISTI # 51Y2135	Cypress Semiconductor	TRAY PKGED / 512 MBIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED RoHS: Not Compliant	0	500:$5.2000 250:$5.3600 100:$6.4000 50:$6.8800 25:$7.3600 10:$8.0800 1:$9.0000
S29GL512T10FHI010 DISTI # 727-29GL512T10FHI010	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	950	1:$9.6000 10:$8.8000 25:$8.0000 50:$7.6200 100:$7.2000 250:$6.6500 500:$5.8000 1000:$5.4000
S29GL512T10FHI010	Cypress Semiconductor	Parallel NOR Mirrorbit Flash, 512Mb, 100ns RoHS: Not Compliant	81	1000:$6.0600 500:$6.3800 100:$6.6400 25:$6.9200 1:$7.4500
S29GL512T10FHI010 DISTI # 2749805	Cypress Semiconductor	FLASH MEMORY, 512MBIT, 100NS, FBGA-64 RoHS: Compliant	811	540:$8.8000 360:$9.2500 180:$9.5400 50:$10.6300 25:$10.6700 10:$10.8900 1:$11.8300
S29GL512T10FHI010 DISTI # 2749805	Cypress Semiconductor	FLASH MEMORY, 512MBIT, 100NS, FBGA-64 RoHS: Compliant	811	250:£3.9100 100:£4.6700 50:£5.2200 25:£5.2300 10:£5.3400 1:£6.3200

图片	型号	描述
	Mfr.#: S29GL512T10TFA010 OMO.#: OMO-S29GL512T10TFA010	NOR Flash Nor
	Mfr.#: S29GL512S12DHIV10 OMO.#: OMO-S29GL512S12DHIV10	NOR Flash 512 MBIT 3V 120NS Parallel NOR Flash
	Mfr.#: S29GL512S11DHV020 OMO.#: OMO-S29GL512S11DHV020	NOR Flash Nor
	Mfr.#: S29GL512S10DHSS10 OMO.#: OMO-S29GL512S10DHSS10	NOR Flash Nor
	Mfr.#: S29GL512T12DHVV10 OMO.#: OMO-S29GL512T12DHVV10-CYPRESS-SEMICONDUCTOR	IC FLASH 512M PARALLEL 64FBGA GL-T
	Mfr.#: S29GL512S11TFV020 OMO.#: OMO-S29GL512S11TFV020-CYPRESS-SEMICONDUCTOR	Flash Memory 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
	Mfr.#: S29GL512S11DHV013 OMO.#: OMO-S29GL512S11DHV013-CYPRESS-SEMICONDUCTOR	IC FLASH 512M PARALLEL 64FBGA GL-S
	Mfr.#: S29GL512T12DHN020 OMO.#: OMO-S29GL512T12DHN020-CYPRESS-SEMICONDUCTOR	IC FLASH 512M PARALLEL GL-T
	Mfr.#: S29GL512P10FFCR20 OMO.#: OMO-S29GL512P10FFCR20-CYPRESS-SEMICONDUCTOR	IC FLASH 512M PARALLEL 64BGA GL-P
	Mfr.#: S29GL512S11TFI020 OMO.#: OMO-S29GL512S11TFI020-CYPRESS-SEMICONDUCTOR	IC FLASH 512M PARALLEL 56TSOP

S29GL512T10FHI010

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes