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PCG30N60A4W

PCG30N60A4W
Mfr. #:
PCG30N60A4W
制造商:
Eaton Corporation
描述:
生命周期:
制造商新产品。
数据表:
PCG30N60A4W 数据表
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ECAD Model:
产品属性
属性值
Tags
PCG3, PCG
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
600V, SMPS IGBT
***rchild Semiconductor
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
型号 制造商 描述 库存 价格
PCG33000F
DISTI # 51K5799		Eaton CorporationTYPE PCG BREAKER FRAME ONLY 3P 3000A 600VAC MAX 100KAIC @6000
  • 50:$144,811.5200
  • 25:$149,946.6900
  • 10:$153,027.7700
  • 5:$156,108.8800
  • 1:$162,271.0600
图片 型号 描述
PCG30N60A4W

Mfr.#: PCG30N60A4W

OMO.#: OMO-PCG30N60A4W-1190

 全新原装
可用性
库存:
Available
订购:
5000
输入数量:
PCG30N60A4W的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
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