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SKM200GB12E4

SKM200GB12E4
Mfr. #:
SKM200GB12E4
制造商:
SEMIKRON
描述:
IGBT, D-56, IGBT, 1200 V, 310 A, 1200 V, 20 V, 5.5 V (Typ.)
生命周期:
制造商新产品。
数据表:
SKM200GB12E4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
赛米控
产品分类
集成电路芯片
Tags
SKM200GB12E, SKM200GB12, SKM200GB1, SKM200GB, SKM200G, SKM200, SKM20, SKM2, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IGBT, D-56, IGBT, 1200 V, 310 A, 1200 V, 20 V, 5.5 V (Typ.)
***nell
IGBT MODULE, DUAL N CH, 1.2KV, 313A; Transistor Polarity: Dual N Channel; DC Collector Current: 313A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra
***ikron
Features: IGBT4 = 4. Generation (Trench)IGBT V CEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x I CNOM Soft switching 4. Generation CAL diode (CAL4) UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders at f sw up to 20 kHz
***ical
Trans IGBT Module N-CH 1200V 275A 1400000mW 7-Pin 62MM Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 275A; Transistor Polarity:n Channel; Dc Collector Current:275A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:1.4Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
Our well-known 62 mm 1200V dual IGBT modules with the fast IGBT2 for high-frequency switching are the right choice for your design. | Summary of Features: High Short Circuit Capability; Self Limiting Short Circuit Current; Low Switching Losses; Unbeatable Robustness; V(CEsat) with positive Temperature Coefficient; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Copper Base Plate; Standard Housing | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***et Europe
Trans IGBT Module N-CH 1.2kV 200A nom 1550W 4-Pin 106.4x61.4mm
*** Electronic Components
IGBT Modules 1200V 200A SINGLE
***trelec
IGBT module Connection: 2 x M6, 3 x M4 Fastening: 4 x M6 Configuration: Single Housing type: 62 mm Collector-emitter saturation voltage: 3.1 V
***et Europe
Trans IGBT Module N-CH 1.2kV 150A nom 1250W 7-Pin 106.4x61.4mm
***ronik
IGBT-Mod. 150A 1200V 2,5kV 62mm
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 17 mJ Energy dissipation during turn-off time: 18 mJ
型号 制造商 描述 库存 价格
SKM200GB12E4HD
DISTI # 86W0684		SEMIKRONIGBT, MODULE, 1.2KV, 314A,Transistor Polarity:Dual NPN,DC Collector Current:314A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:7Pins RoHS Compliant: Yes0
    SKM200GB12E4
    DISTI # 70098168    		SEMIKRONIGBT,D-56,IGBT,1200 V,310 A,1200 V,20 V,5.5 V (Typ.)
    RoHS: Compliant    		0
    • 1:$173.1800
    • 12:$163.9400
    • 48:$155.6100
    • 96:$148.1000
    • 144:$141.2700
    SKM200GB12E4
    DISTI # 6874973    		SEMIKRONIGBT MODULE HALF-BRIDGE 314A 1200V, EA54
    • 20:£105.4900
    • 10:£114.6600
    • 5:£115.6400
    • 2:£118.0900
    • 1:£120.5400
    SKM200GB12E4
    DISTI # 2423693    		SEMIKRONIGBT MODULE, DUAL N CH, 1.2KV, 313A
    RoHS: Compliant    		0
    • 1:$274.6800
    SKM200GB12E4
    DISTI # 2423693    		SEMIKRONIGBT MODULE, DUAL N CH, 1.2KV, 313A
    RoHS: Compliant    		0
    • 10:£118.0000
    • 5:£132.0000
    • 1:£159.0000
    图片 型号 描述
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    Mfr.#: SKM200GAH123DKLSP

    OMO.#: OMO-SKM200GAH123DKLSP-1190

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    Mfr.#: SKM200GAL125

    OMO.#: OMO-SKM200GAL125-1190

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    Mfr.#: SKM200GAL12E4

    OMO.#: OMO-SKM200GAL12E4-1190

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    SKM200GAR063D

    Mfr.#: SKM200GAR063D

    OMO.#: OMO-SKM200GAR063D-1190

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    Mfr.#: SKM200GB123D

    OMO.#: OMO-SKM200GB123D-1190

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    Mfr.#: SKM200GB126D

    OMO.#: OMO-SKM200GB126D-1190

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    SKM200GB128DE

    Mfr.#: SKM200GB128DE

    OMO.#: OMO-SKM200GB128DE-1190

    		 全新原装
    SKM200GB12V

    Mfr.#: SKM200GB12V

    OMO.#: OMO-SKM200GB12V-1190

    		 IGBT Array & Module Transistor, Dual N Channel, 311 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes
    SKM200GB174D

    Mfr.#: SKM200GB174D

    OMO.#: OMO-SKM200GB174D-1190

    		 全新原装
    可用性
    库存:
    Available
    订购:
    2500
    输入数量:
    SKM200GB12E4的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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