NGTG40N120FL2WG

Mfr. #:: NGTG40N120FL2WG
制造商:: ON Semiconductor
描述:: IGBT Transistors 1200V/40A FAST IGBT FSII
生命周期:: 制造商新产品。
数据表:: NGTG40N120FL2WG 数据表
交货:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NGTG40N120FL2WG Datasheet NGTG40N120FL2WG Datasheet (P4-P6)NGTG40N120FL2WG Datasheet (P7-P9)NGTG40N120FL2WG Datasheet (P10)
ECAD Model:

产品属性
属性值

制造商：: 安森美半导体

产品分类：: IGBT晶体管

RoHS：: Y

技术：: 硅

打包：: 管子

品牌：: 安森美半导体

产品类别：: IGBT晶体管

出厂包装数量：: 30

子类别：: IGBT

单位重量：: 0.241847 oz

Tags: NGTG, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTG40N120FL2WG 描述

***p One Stop Global: Trans IGBT Chip N-CH 1200V 80A 535000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, 1.2KV, 80A, 175DEG C, 535W;

***r Electronics: Insulated Gate Bipolar Transistor

***ark: Igbt, Single, N Channel, 1.2Kv, 80A, To-247-3; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2V; Power Dissipation:535W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°Crohs Compliant: Yes |Onsemi NGTG40N120FL2WG

***ical: Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: FGH40T120SMD Series 1200 V 80 A 555 W FS Trench IGBT -TO247-3

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***icroelectronics: Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

***ical: Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of

***icroelectronics: Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

***ical: Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of

***icroelectronics: Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

***ical: Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pin

***ical: Trans IGBT Chip N=-CH 1200V 80A 882000mW 3-Pin(3+Tab) Power TO-247 T/R

***ark: 1200V 40A FS2 Trench IGBT - 3LD, POWER TO247, NON JEDEC, LONG LEAD

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***p One Stop: Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH50S Series 1200 V 57 A N-Channel Standard Speed IGBT - TO-247AC

***(Formerly Allied Electronics): Power MOSFET, 1200V DC-1 kHz (Std.) Discrete IGBT TO-247AC | Infineon IRG4PH50SPBF

***ineon SCT: 1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 1.7 V Current release time: 1000 ns Power dissipation: 200 W

***ment14 APAC: IGBT, 1200V, 57A, TO-247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.47V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:57A; Current Temperature:25°C; Device Marking:IRG4PH50S; Fall Time Max:638ns; Full Power Rating Temperature:25°C; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:114A; Rise Time:29ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

型号	制造商	描述	库存	价格
NGTG40N120FL2WG DISTI # 26621721	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	22320	1000:$4.1869 500:$4.3520 250:$4.7770 120:$4.9980
NGTG40N120FL2WG DISTI # NGTG40N120FL2WG-ND	ON Semiconductor	IGBT 1200V 40A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	60In Stock	1020:$4.6777 510:$5.3708 120:$6.1677 30:$7.1033 1:$8.2500
NGTG40N120FL2WG DISTI # NGTG40N120FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTG40N120FL2WG) RoHS: Compliant Min Qty: 120 Container: Tube	Americas - 0	120:$4.2900 180:$4.1900 300:$4.1900 600:$4.0900 1200:$3.9900
NGTG40N120FL2WG DISTI # 863-NGTG40N120FL2WG	ON Semiconductor	IGBT Transistors 1200V/40A FAST IGBT FSII RoHS: Compliant	79	1:$7.8500 10:$7.1000 25:$6.7700 100:$5.8800 250:$5.6200 500:$5.1200 1000:$4.4600
NGTG40N120FL2WG	ON Semiconductor	INSTOCK	321
NGTG40N120FL2WG	ON Semiconductor		280	1:$7.8800 100:$5.9100 500:$5.0700 1000:$4.7300

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