IPB80N06S407ATMA2

IPB80N06S407ATMA2
Mfr. #:
IPB80N06S407ATMA2
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 60V 80A D2PAK-2
生命周期:
制造商新产品。
数据表:
IPB80N06S407ATMA2 数据表
交货:
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HTML Datasheet:
IPB80N06S407ATMA2 DatasheetIPB80N06S407ATMA2 Datasheet (P4-P6)IPB80N06S407ATMA2 Datasheet (P7-P9)
ECAD Model:
更多信息:
IPB80N06S407ATMA2 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-263-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
60 V
Id - 连续漏极电流:
80 A
Rds On - 漏源电阻:
7.1 mOhms
配置:
单身的
资质:
AEC-Q101
打包:
卷轴
高度:
4.4 mm
长度:
10 mm
系列:
IPB80N06S4
晶体管类型:
1 N-Channel
宽度:
9.25 mm
品牌:
英飞凌科技
产品类别:
MOSFET
出厂包装数量:
1000
子类别:
MOSFET
第 # 部分别名:
IPB80N06S4-07 IPB8N6S47XT SP001028672
单位重量:
0.068654 oz
Tags
IPB80N06S40, IPB80N06S4, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***et Europe
Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263
***ronik
MOSFET 60V 7.1mOHM AECQ TO263 RoHSconf
***Components
MOSFET N-Ch 80V 80A OptiMOS-T2 TO-263
***i-Key
MOSFET N-CH 60V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB80N06S407ATMA2
DISTI # V72:2272_06384392
Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
900
  • 500:$0.7607
  • 250:$0.8680
  • 100:$0.8769
  • 25:$1.1465
  • 10:$1.1580
  • 1:$1.5009
IPB80N06S407ATMA2
DISTI # V36:1790_06384392
Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB80N06S407ATMA2
    DISTI # IPB80N06S407ATMA2-ND
    Infineon Technologies AGMOSFET N-CH 60V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 1000:$0.6657
    IPB80N06S407ATMA2
    DISTI # 30163392
    Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    2000
    • 1000:$0.5269
    IPB80N06S407ATMA2
    DISTI # 29561229
    Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    900
    • 12:$1.5009
    IPB80N06S407ATMA2
    DISTI # IPB80N06S407ATMA2
    Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S407ATMA2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$0.5369
    • 6000:$0.5459
    • 4000:$0.5649
    • 2000:$0.5869
    • 1000:$0.6089
    IPB80N06S407ATMA2
    DISTI # IPB80N06S407ATMA2
    Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S407ATMA2)
    RoHS: Compliant
    Min Qty: 676
    Container: Bulk
    Americas - 0
    • 6760:$0.4699
    • 3380:$0.4779
    • 2028:$0.4949
    • 1352:$0.5129
    • 676:$0.5329
    IPB80N06S407ATMA2
    DISTI # SP001028672
    Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: SP001028672)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 10000:€0.5019
    • 6000:€0.5409
    • 4000:€0.5859
    • 2000:€0.6389
    • 1000:€0.7819
    IPB80N06S407ATMA2
    DISTI # 726-IPB80N06S407ATMA
    Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2
    RoHS: Compliant
    639
    • 1:$1.3800
    • 10:$1.1800
    • 100:$0.9090
    • 500:$0.8040
    • 1000:$0.6350
    • 2000:$0.5630
    • 10000:$0.5420
    IPB80N06S4-07
    DISTI # 726-IPB80N06S4-07
    Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
    RoHS: Compliant
    0
      IPB80N06S407ATMA2Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      130
      • 1000:$0.4900
      • 500:$0.5100
      • 100:$0.5300
      • 25:$0.5600
      • 1:$0.6000
      IPB80N06S407ATMA2
      DISTI # 8269440P
      Infineon Technologies AGMOSFET N-CH 80A 60V OPTIMOS-T2 TO263, RL750
      • 250:£0.4190
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      OMO.#: OMO-IAUT300N10S5N015ATMA1

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      IPD50N06S409ATMA2

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      Mfr.#: LM317MSTT3G

      OMO.#: OMO-LM317MSTT3G

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      Mfr.#: TLF51801ELV

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      可用性
      库存:
      639
      订购:
      2622
      输入数量:
      IPB80N06S407ATMA2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$1.38
      US$1.38
      10
      US$1.18
      US$11.80
      100
      US$0.91
      US$90.90
      500
      US$0.80
      US$402.00
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