SI4431CDY-T1-E3

Mfr. #:: SI4431CDY-T1-E3
制造商:: Vishay
描述:: MOSFET P-CH 30V 9A 8SOIC
生命周期:: 制造商新产品。
数据表:: SI4431CDY-T1-E3 数据表
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更多信息:: SI4431CDY-T1-E3 更多信息

产品属性
属性值

制造商: 威世

产品分类: FET - 单

打包: 卷轴

部分别名: SI4431CDY-E3

单位重量: 0.006596 oz

安装方式: 贴片/贴片

包装盒: SOIC-Narrow-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 P-Channel

钯功耗: 2.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 9 ns 11 ns

上升时间: 13 ns 89 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 7 A

Vds-漏-源-击穿电压: - 30 V

Rds-On-Drain-Source-Resistance: 32 mOhms

晶体管极性: P-通道

典型关断延迟时间: 23 ns 22 ns

典型开启延迟时间: 10 ns 38 ns

通道模式: 增强

Tags: SI4431CDY-T1, SI4431CDY-T, SI4431C, SI4431, SI443, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4431CDY-T1-E3 描述

***ure Electronics: Single P-Channel 30 V 2.5 W 38 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R

***i-Key: MOSFET P-CH 30V 9A 8SOIC

***ark: Transistor Polarity:p Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:4.2W; No. Of Pins:8Pins Rohs Compliant: No

SI4431CDY-T1-E3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI4431CDY-T1-E3 DISTI # V72:2272_09216489	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2426	1000:$0.3957 500:$0.4347 250:$0.4737 100:$0.4739 25:$0.6091 10:$0.6098 1:$0.7477
SI4431CDY-T1-E3 DISTI # V36:1790_09216489	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2041In Stock	1000:$0.5588 500:$0.6993 100:$0.8924 10:$1.1210 1:$1.2600
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2041In Stock	1000:$0.5588 500:$0.6993 100:$0.8924 10:$1.1210 1:$1.2600
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	12500:$0.4675 5000:$0.4845 2500:$0.5084
SI4431CDY-T1-E3 DISTI # 31749187	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2426	1000:$0.4254 500:$0.4673 250:$0.5092 100:$0.5094 25:$0.6548 15:$0.6555
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2911 5000:$0.2825 10000:$0.2710 15000:$0.2635 25000:$0.2564
SI4431CDY-T1-E3 DISTI # 33P5257	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	50000:$0.3160 30000:$0.3300 20000:$0.3550 10000:$0.3790 5000:$0.4110 1:$0.4210
SI4431CDY-T1-E3. DISTI # 23AC9598	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:4.2W,No. of Pins:8Pins RoHS Compliant: No	0	50000:$0.3160 30000:$0.3300 20000:$0.3550 10000:$0.3790 5000:$0.4110 1:$0.4210
SI4431CDY-T1-E3 DISTI # 781-SI4431CDY-E3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	3041	1:$0.8000 10:$0.6380 100:$0.4850
SI4431CDY-T1-E3	Vishay Intertechnologies		999	201:$0.8000 51:$1.0000 1:$2.0000
SI4431CDYT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 1990

图片	型号	描述
	Mfr.#: SI4431CDY-T1-GE3 OMO.#: OMO-SI4431CDY-T1-GE3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4431CDY-T1-E3 OMO.#: OMO-SI4431CDY-T1-E3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4431CDY OMO.#: OMO-SI4431CDY-1190	全新原装
	Mfr.#: SI4431CDY-GE3-S OMO.#: OMO-SI4431CDY-GE3-S-1190	全新原装
	Mfr.#: SI4431CDY-T1-E3 OMO.#: OMO-SI4431CDY-T1-E3-VISHAY	MOSFET P-CH 30V 9A 8SOIC
	Mfr.#: SI4431CDY-T1-GE3 OMO.#: OMO-SI4431CDY-T1-GE3-VISHAY	MOSFET P-CH 30V 9A 8-SOIC
	Mfr.#: SI4431CDY-T1-GE3-S OMO.#: OMO-SI4431CDY-T1-GE3-S-1190	全新原装
	Mfr.#: SI4431CDY-TI-GE3 OMO.#: OMO-SI4431CDY-TI-GE3-1190	全新原装

SI4431CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes