TC58BYG2S0HBAI6

Mfr. #:: TC58BYG2S0HBAI6
制造商:: Toshiba Memory
描述:: NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
生命周期:: 制造商新产品。
数据表:: TC58BYG2S0HBAI6 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: TC58BYG2S0HBAI6 更多信息

产品属性
属性值

制造商：: 东芝

产品分类：: NAND闪存

RoHS：: Y

安装方式：: 贴片/贴片

包装/案例：: VFBGA-67

内存大小：: 4 Gbit

接口类型：: 平行线

组织：: 512 M x 8

数据总线宽度：: 8 bit

电源电压 - 最小值：: 1.7 V

电源电压 - 最大值：: 1.95 V

电源电流 - 最大值：: 30 mA

最低工作温度：: - 40 C

最高工作温度：: + 85 C

打包：: 托盘

内存类型：: NAND

品牌：: 东芝内存

最大时钟频率：: -

湿气敏感：: 是的

产品类别：: NAND闪存

出厂包装数量：: 338

子类别：: 内存和数据存储

Tags: TC58BYG2, TC58BY, TC58B, TC58, TC5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TC58BYG2S0HBAI6 描述

***ical: NAND Flash Parallel 1.8V 4G-bit 512M x 8 67-Pin VFBGA

***et: 4Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V

***or: IC FLASH 4GBIT PARALLEL 67VFBGA

***ical: SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 Tray

***enic: BGA-67(8x6.5) NAND FLASH ROHS

***i-Key: IC FLASH 1GBIT PARALLEL 67BGA

***ca Corp: Flash, 128MX8, PBGA67

***pmh: FLASH, 256MX8, PDSO48

***et: 4-BIT ECC X8 I/O AND 1.8V VCC SPANSION

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

***-Wing Technology: Discontinued 2016 BOTTOM Non-Volatile FLASH Memory -40C~85C TA 1.7V 2147483648bit 6.5mm

***ark: TRAY PKGED / 2GB, 4-BIT ECC, X8 I/O AND 1.8V VCC SPANSIONA(R) SLC NAND FLASH MEMORY IN BGA 67-BALL

***ical: SLC NAND Flash Parallel 1.8V 2G-bit 256M x 8 Tray

***pmh: 71V124 - 3.3V STATIC RAM 1 MEG (

***et: 2GB, 4-BIT ECC, X8 I/O AND 1.8

***ark: TRAY PKGED / 4-BIT ECC, X8 I/O AND 3V VCC SPANSIONA(R) SLC NAND FLASH MEMORY, BGA

***ical: SLC NAND Flash Parallel 3V/3.3V 1G-bit 64M x 16 67-Pin BGA Tray

***pmh: NOR FLASH SERIAL-SPI 3V/3.3V 32M

TC58BYG2S0HBAI6 更多信息

SLC NAND and BENAND: Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory.

Market price

型号	制造商	描述	库存	价格
TC58BYG2S0HBAI6 DISTI # V99:2348_18853859	Toshiba America Electronic Components	NAND Flash Serial 1.8V 4G-bit 512M x 8 67-Pin VFBGA	54	2500:$3.2800 1000:$3.3730 500:$3.5060 250:$3.6570 100:$3.7020 50:$4.0780 10:$4.1460 1:$4.5210
TC58BYG2S0HBAI6 DISTI # TC58BYG2S0HBAI6-ND	Toshiba Semiconductor and Storage Products	IC FLASH 4G PARALLEL 67VFBGA RoHS: Compliant Min Qty: 1 Container: Tray	188In Stock	1014:$3.6619 676:$3.8246 338:$4.0793 100:$4.0950 50:$4.5648 25:$4.5964 10:$4.6860 1:$5.1300
TC58BYG2S0HBAI6 DISTI # TC58BYG2S0HBAI6	Toshiba America Electronic Components	4Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V - Trays (Alt: TC58BYG2S0HBAI6) RoHS: Compliant Min Qty: 338 Container: Tray	Americas - 0	338:$3.8900 676:$3.7900 1352:$3.6900 2028:$3.6900 3380:$3.5900
TC58BYG2S0HBAI6 DISTI # 757-TC58BYG2S0HBAI6	Toshiba America Electronic Components	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) RoHS: Compliant	385	1:$4.9000 10:$4.4700 50:$4.3500 100:$3.9100 250:$3.8900 500:$3.6500 1000:$3.4900

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