FGH25N120FTDS

FGH25N120FTDS
Mfr. #:
FGH25N120FTDS
制造商:
ON Semiconductor
描述:
IGBT Transistors 1200V 25A Field Stop Trench IGBT
生命周期:
制造商新产品。
数据表:
FGH25N120FTDS 数据表
交货:
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支付:
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ECAD Model:
更多信息:
FGH25N120FTDS 更多信息
产品属性
属性值
制造商
仙童半导体
产品分类
集成电路芯片
系列
-
打包
管子
单位重量
0.225401 oz
包装盒
TO-247-3
输入类型
标准
安装型
通孔
供应商-设备-包
TO-247
最大功率
313W
反向恢复时间trr
535ns
电流收集器 Ic-Max
50A
电压收集器发射极击穿最大值
1200V
IGBT型
海沟场停止
电流收集器脉冲Icm
75A
Vce-on-Max-Vge-Ic
2V @ 15V, 25A
开关能源
1.42mJ (on), 1.16mJ (off)
栅极电荷
169nC
Td-on-off-25°C
26ns/151ns
测试条件
600V, 25A, 10 Ohm, 15V
Tags
FGH25N, FGH25, FGH2, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
型号 制造商 描述 库存 价格
FGH25N120FTDS
DISTI # FGH25N120FTDS-ND
ON SemiconductorIGBT 1200V 50A 313W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
2In Stock
  • 1:$7.8700
FGH25N120FTDS
DISTI # FGH25N120FTDS
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FGH25N120FTDS)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 17976
  • 1:$3.4900
  • 10:$3.4900
  • 25:$3.4900
  • 50:$3.4900
  • 100:$3.3900
  • 500:$3.3900
  • 1000:$3.2900
FGH25N120FTDS
DISTI # 64R3073
ON SemiconductorFS1TIGBT TO247 25A 1200V / TUBE0
  • 1:$8.0700
  • 10:$6.6600
  • 100:$5.5500
  • 500:$5.0800
  • 1000:$4.4500
  • 2500:$4.3000
FGH25N120FTDS
DISTI # 512-FGH25N120FTDS
ON SemiconductorIGBT Transistors 1200V 25A Field Stop Trench IGBT
RoHS: Compliant
328
  • 1:$7.4900
  • 10:$6.7700
  • 25:$6.4600
  • 100:$5.6100
  • 250:$5.3600
图片 型号 描述
FGH25N120FTDS

Mfr.#: FGH25N120FTDS

OMO.#: OMO-FGH25N120FTDS

IGBT Transistors 1200V 25A Field Stop Trench IGBT
FGH25N120FTDS

Mfr.#: FGH25N120FTDS

OMO.#: OMO-FGH25N120FTDS-ON-SEMICONDUCTOR

IGBT Transistors 1200V 25A Field Stop Trench IGBT
FGH25N120FTD3

Mfr.#: FGH25N120FTD3

OMO.#: OMO-FGH25N120FTD3-1190

全新原装
FGH25N120FTDH

Mfr.#: FGH25N120FTDH

OMO.#: OMO-FGH25N120FTDH-1190

全新原装
可用性
库存:
Available
订购:
1000
输入数量:
FGH25N120FTDS的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$4.94
US$4.94
10
US$4.69
US$46.88
100
US$4.44
US$444.15
500
US$4.19
US$2 097.40
1000
US$3.95
US$3 948.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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