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IXTY4N65X2

IXTY4N65X2
Mfr. #:
IXTY4N65X2
制造商:
Littelfuse
描述:
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
生命周期:
制造商新产品。
数据表:
IXTY4N65X2 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IXTY4N65X2 更多信息
产品属性
属性值
制造商：
IXYS
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
4 A
Rds On - 漏源电阻：
850 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
8.3 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
80 W
配置：
单身的
频道模式：
增强
商品名：
高功率场效应晶体管
打包：
管子
系列：
X2-Class
品牌：
IXYS
正向跨导 - 最小值：
2.5 S
秋季时间：
25 ns
产品类别：
MOSFET
上升时间：
28 ns
出厂包装数量：
70
子类别：
MOSFET
典型关断延迟时间：
57 ns
典型的开启延迟时间：
22 ns
单位重量：
0.081130 oz
Tags
IXTY4N65, IXTY4N, IXTY4, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***enic
650V 4A 850m´Î@10V2A 80W 5V@250Ã×A N Channel TO-252 MOSFETs ROHS
***nell
MOSFET, N-CH, 650V, 4A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4 / Drain-Source Voltage (Vds) V = 650 / ON Resistance (Rds(on)) mOhm = 850 / Gate-Source Voltage V = 30 / Fall Time ns = 25 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 57 / Turn-ON Delay Time ns = 22 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 80
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
*** Electronics
STMICROELECTRONICS STD9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
*** Electronics
Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; PG-TO252-3
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***et
Trans MOSFET N-CH 500(Min)V 5A 3-Pin TO-252 T/R
***ical
Metal Oxide Semiconductor Field Effect Transistor Opt
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***icroelectronics
N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package
*** Electronics
STMICROELECTRONICS STD7N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.98ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***ineon SCT
Single N-Channel 650V 650 mOhm 23 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 650V, 10.1A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***icroelectronics
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
***ical
Trans MOSFET N-CH 650V 5.5A 3-Pin(2+Tab) DPAK T/R
***el Electronic
IC REG LIN 1.5V 3A DDPAK/TO263-5
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
型号 制造商 描述 库存 价格
IXTY4N65X2
DISTI # IXTY4N65X2-ND		IXYS CorporationMOSFET N-CH 650V 4A X2 TO-252
RoHS: Compliant
Min Qty: 1
Container: Tube		46In Stock
  • 2520:$0.8400
  • 560:$1.0500
  • 140:$1.3500
  • 70:$1.5000
  • 10:$1.6800
  • 1:$1.8600
IXTY4N65X2
DISTI # 747-IXTY4N65X2		IXYS CorporationMOSFET
RoHS: Compliant		72
  • 1:$2.1400
  • 10:$1.9300
  • 25:$1.6800
  • 50:$1.5800
  • 100:$1.5500
  • 250:$1.2600
  • 500:$1.2100
  • 1000:$1.0000
  • 2500:$0.8400
IXTY4N65X2
DISTI # 9171473P		IXYS CorporationN-CH X2 SERIES MOSFET 650V 4A TO-252, TU115
  • 25:£1.1460
IXTY4N65X2
DISTI # IXTY4N65X2		IXYS CorporationTransistor: N-MOSFET,X2-Class,unipolar,650V,4A,80W,TO252147
  • 70:$0.8700
  • 20:$0.9700
  • 5:$1.1000
  • 1:$1.2200
IXTY4N65X2
DISTI # 2674796		IXYS CorporationMOSFET, N-CH, 650V, 4A, TO-252
RoHS: Compliant		9
  • 500:£0.9450
  • 250:£0.9800
  • 100:£1.0600
  • 25:£1.1400
  • 5:£1.6200
IXTY4N65X2
DISTI # 2674796		IXYS CorporationMOSFET, N-CH, 650V, 4A, TO-252
RoHS: Compliant		9
  • 2500:$1.3200
  • 1000:$1.3800
  • 500:$1.4500
  • 250:$1.5300
  • 100:$1.7800
  • 25:$2.1100
  • 10:$2.5800
  • 1:$2.9500
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B32652A6104K289

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可用性
库存:
72
订购:
2055
输入数量:
IXTY4N65X2的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.14
US$2.14
10
US$1.93
US$19.30
25
US$1.68
US$42.00
50
US$1.58
US$79.00
100
US$1.55
US$155.00
250
US$1.26
US$315.00
500
US$1.21
US$605.00
1000
US$1.00
US$1 000.00
2500
US$0.84
US$2 100.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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