HGTG20N60A4D

HGTG20N60A4D
Mfr. #:
HGTG20N60A4D
制造商:
ON Semiconductor
描述:
IGBT 600V 70A 290W TO247
生命周期:
制造商新产品。
数据表:
HGTG20N60A4D 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
仙童半导体
产品分类
IGBT - 单
系列
-
打包
管子
部分别名
HGTG20N60A4D_NL
单位重量
0.225401 oz
安装方式
通孔
包装盒
TO-247-3
输入类型
标准
安装型
通孔
供应商-设备-包
TO-247
配置
单身的
最大功率
290W
反向恢复时间trr
35ns
电流收集器 Ic-Max
70A
电压收集器发射极击穿最大值
600V
IGBT型
-
电流收集器脉冲Icm
280A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 20A
开关能源
105μJ (on), 150μJ (off)
栅极电荷
142nC
Td-on-off-25°C
15ns/73ns
测试条件
390V, 20A, 3 Ohm, 15V
钯功耗
290 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
600 V
集电极-发射极-饱和-电压
1.8 V
25-C 时的连续集电极电流
70 A
栅极-发射极-漏电流
+/- 250 nA
最大栅极发射极电压
+/- 20 V
连续集电极电流 Ic-Max
70 A
Tags
HGTG20N60A4D, HGTG20N60A, HGTG20N6, HGTG20, HGTG2, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, SMPS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST DIODE
***ure Electronics
HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
***et
PWR IGBT 45A,600V,SMPS N-CH W/DIODE TO-247
***Components
TRANSISTOR IGBT N-CH 600V 70A TO247
***ark
Pt P To247 45A 600V Smps Rohs Compliant: Yes
***i-Key
IGBT N-CH SMPS 600V 70A TO247
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
***Semiconductor
600V, SMPS IGBT
***nell
IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:2.7V; Power Dissipation:290W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:280A; Device Marking:HGTG20N60A4D; No. of Pins:3; Power, Pd:290W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:32ns; Time, Fall Typ:32ns; Time, Rise:12ns; Transistors, No. of:1
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
型号 制造商 描述 库存 价格
HGTG20N60A4D
DISTI # V36:1790_06359605
ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # V99:2348_06359605
ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4DFS-ND
ON SemiconductorIGBT 600V 70A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
337In Stock
  • 1350:$2.9565
  • 900:$3.4739
  • 450:$3.8520
  • 10:$4.9070
  • 1:$5.4400
HGTG20N60A4D
DISTI # 31882442
ON SemiconductorPT P TO247 45A 600V SMPS5215
  • 4500:$1.8144
  • 450:$1.9104
HGTG20N60A4D
DISTI # 31600626
ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 4:$4.3540
HGTG20N60A4D
DISTI # 31262149
ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 3:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4D
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 9000
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.8900
HGTG20N60A4D
DISTI # HGTG20N60A4D
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450
Asia - 0
  • 450:$3.1792
  • 900:$3.0569
  • 1350:$2.9437
  • 2250:$2.8386
  • 4500:$2.7407
  • 11250:$2.6493
  • 22500:$2.6059
HGTG20N60A4D
DISTI # HGTG20N60A4D
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.4900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.7900
HGTG20N60A4D
DISTI # 95B2568
ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 95B2568)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$5.1800
  • 10:$4.4300
  • 25:$4.2400
  • 50:$4.0500
  • 100:$3.8600
  • 250:$3.6700
HGTG20N60A4D
DISTI # 95B2568
ON SemiconductorSINGLE IGBT, 600V, 70A,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes397
  • 250:$3.5400
  • 100:$3.7200
  • 50:$3.9000
  • 25:$4.0900
  • 10:$4.2700
  • 1:$4.9900
HGTG20N60A4D
DISTI # 25M9637
ON SemiconductorIGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 RoHS Compliant: Yes2606
  • 500:$3.0300
  • 250:$3.3800
  • 100:$3.5600
  • 50:$3.7400
  • 25:$3.9300
  • 10:$4.1100
  • 1:$4.8300
HGTG20N60A4D
DISTI # 512-HGTG20N60A4D
ON SemiconductorIGBT Transistors 600V
RoHS: Compliant
779
  • 1:$4.8300
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
HGTG20N60A4D
DISTI # HGTG20N60A4D
ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3459
  • 1:$4.0900
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4D
DISTI # HGTG20N60A4D
ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3455
  • 1:$4.0800
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4DFairchild Semiconductor Corporation 
RoHS: Compliant
Europe - 8
    HGTG20N60A4D
    DISTI # 1057679
    ON SemiconductorIGBT, TO-247
    RoHS: Compliant
    2645
    • 500:$4.9700
    • 250:$5.5400
    • 100:$5.8400
    • 10:$6.7500
    • 1:$7.9300
    HGTG20N60A4D
    DISTI # 1057679
    ON SemiconductorIGBT, TO-247
    RoHS: Compliant
    2631
    • 500:£2.3700
    • 250:£2.6300
    • 100:£2.7700
    • 10:£3.2000
    • 1:£4.1900
    HGTG20N60A4D
    DISTI # XSFP00000149449
    Fairchild Semiconductor Corporation 
    RoHS: Compliant
    390 in Stock0 on Order
    • 390:$4.4500
    • 60:$4.9000
    图片 型号 描述
    HGTG20N60A4D

    Mfr.#: HGTG20N60A4D

    OMO.#: OMO-HGTG20N60A4D

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    HGTG20N60B3D

    Mfr.#: HGTG20N60B3D

    OMO.#: OMO-HGTG20N60B3D-ON-SEMICONDUCTOR

    IGBT 600V 40A 165W TO247
    HGTG20N100D2

    Mfr.#: HGTG20N100D2

    OMO.#: OMO-HGTG20N100D2-1190

    Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247
    HGTG20N120E2

    Mfr.#: HGTG20N120E2

    OMO.#: OMO-HGTG20N120E2-1190

    Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-247
    HGTG20N50C1D

    Mfr.#: HGTG20N50C1D

    OMO.#: OMO-HGTG20N50C1D-1190

    Insulated Gate Bipolar Transistor, 26A I(C), 500V V(BR)CES, N-Channel, TO-247
    HGTG20N60

    Mfr.#: HGTG20N60

    OMO.#: OMO-HGTG20N60-1190

    全新原装
    HGTG20N60B3DJ5

    Mfr.#: HGTG20N60B3DJ5

    OMO.#: OMO-HGTG20N60B3DJ5-1190

    全新原装
    HGTG20N60C3D

    Mfr.#: HGTG20N60C3D

    OMO.#: OMO-HGTG20N60C3D-ON-SEMICONDUCTOR

    IGBT 600V 45A 164W TO247
    HGTG20N60C3DR

    Mfr.#: HGTG20N60C3DR

    OMO.#: OMO-HGTG20N60C3DR-1190

    全新原装
    HGTG20N60A4  20N60A4

    Mfr.#: HGTG20N60A4 20N60A4

    OMO.#: OMO-HGTG20N60A4-20N60A4-1190

    全新原装
    可用性
    库存:
    Available
    订购:
    4000
    输入数量:
    HGTG20N60A4D的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$2.20
    US$2.20
    10
    US$2.09
    US$20.88
    100
    US$1.98
    US$197.83
    500
    US$1.87
    US$934.20
    1000
    US$1.76
    US$1 758.50
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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