SI4932DY-T1-GE3

Name: Vishay - SI4932DY-T1-GE3
Brand: Vishay
SKU: OMO-2921118
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI4932DY-T1-GE3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 30V 8.0A 3.2W 15mohm @ 10V
生命周期:: 制造商新产品。
数据表:: SI4932DY-T1-GE3 数据表
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更多信息:: SI4932DY-T1-GE3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: 卷带 (TR)

部分别名: SI4932DY-GE3

单位重量: 0.006596 oz

安装方式: 贴片/贴片

包装盒: 8-SOIC (0.154", 3.90mm Width)

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 8-SO

配置: 双双漏

FET型: 2 N-Channel (Dual)

最大功率: 3.2W

晶体管型: 2 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 1750pF @ 15V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 8A

Rds-On-Max-Id-Vgs: 15 mOhm @ 7A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

栅极电荷-Qg-Vgs: 48nC @ 10V

钯功耗: 2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 8 ns

上升时间: 10 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 8 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 15 mOhms

晶体管极性: N通道

典型关断延迟时间: 26 ns

典型开启延迟时间: 21 ns

通道模式: 增强

Tags: SI493, SI49, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4932DY-T1-GE3 描述

***ure Electronics: Si4932DY Series Dual N-Channel 30 V 15 mOhms Surface Mount Power Mosfet-SOIC-8

***et: Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R

***ark: DUAL N-CHANNEL 30-V (D-S) MOSFET

SI4932DY-T1-GE3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.6237
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4932DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5889 5000:$0.5719 10000:$0.5479 15000:$0.5329 25000:$0.5189
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R (Alt: SI4932DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.6412 5000:$0.4933 7500:$0.3926 12500:$0.3317 25000:$0.3054 62500:$0.2960 125000:$0.2871
SI4932DY-T1-GE3 DISTI # 781-SI4932DY-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS: Compliant	0	1:$1.4200 10:$1.1700 100:$0.8960 500:$0.7700 1000:$0.6760 2500:$0.6750
SI4932DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS: Compliant	Americas -

SI4932DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes