BSM25GD120DN2

BSM25GD120DN2
Mfr. #:
BSM25GD120DN2
制造商:
Infineon Technologies
描述:
IGBT Modules 1200V 25A FL BRIDGE
生命周期:
制造商新产品。
数据表:
BSM25GD120DN2 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT 模块
RoHS:
Y
产品:
IGBT 硅模块
配置:
十六进制
集电极-发射极电压 VCEO 最大值:
1200 V
集电极-发射极饱和电压:
2.5 V
25 C 时的连续集电极电流:
35 A
栅极-发射极漏电流:
180 nA
Pd - 功耗:
200 W
包装/案例:
EconoPACK 2A
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
打包:
托盘
高度:
17 mm
长度:
107.5 mm
宽度:
45 mm
品牌:
英飞凌科技
安装方式:
底盘安装
最大栅极发射极电压:
20 V
产品类别:
IGBT 模块
出厂包装数量:
10
子类别:
IGBT
第 # 部分别名:
BSM25GD120DN2BOSA1 SP000100370
单位重量:
6.349313 oz
Tags
BSM25GD120DN2, BSM25GD120DN, BSM25GD120D, BSM25GD12, BSM25GD, BSM25G, BSM25, BSM2, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V,25A,FL BRIDGE
***omponent
TRANS IGBT MODULE N-CH 1200V 35A 17ECONOPACK 2
***nell
IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:25A; Voltage, Vce sat max:3V; Power dissipation:200W; Case style:Econopack 2; Current, Icm pulsed:50A; Power, Pd:200W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.5V; Voltage, Vceo:1200V
型号 制造商 描述 库存 价格
BSM25GD120DN2BOSA1
DISTI # BSM25GD120DN2BOSA1-ND
Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$91.5730
BSM25GD120DN2E3224BOSA1
DISTI # BSM25GD120DN2E3224BOSA1-ND
Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$91.5730
BSM25GD120DN2BOSA1
DISTI # BSM25GD120DN2BOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm - Trays (Alt: BSM25GD120DN2BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$85.3900
  • 20:$82.3900
  • 40:$79.3900
  • 60:$76.6900
  • 100:$75.2900
BSM25GD120DN2E3224
DISTI # SP000100361
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100361)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1:€81.2900
  • 10:€78.8900
  • 25:€77.9900
  • 50:€74.0900
  • 100:€72.7900
  • 500:€71.9900
  • 1000:€70.9900
BSM25GD120DN2E3224BOSA1
DISTI # BSM25GD120DN2E3224BOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM25GD120DN2E3224BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$85.3900
  • 20:$82.3900
  • 40:$79.3900
  • 60:$76.6900
  • 100:$75.2900
BSM25GD120DN2
DISTI # 95M4164
Infineon Technologies AGIGBT MOD, N-CH, 1.2KV, 35A, ECONOPACK 2,Transistor Polarity:N Channel,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:-RoHS Compliant: Yes0
  • 1:$94.9300
  • 5:$93.1900
  • 10:$88.9900
BSM25GD120DN2
DISTI # 641-BSM25GD120DN2
Infineon Technologies AGIGBT Modules 1200V 25A FL BRIDGE
RoHS: Compliant
0
    BSM25GD120DN2E3224
    DISTI # 641-BSM25GD120DN2E32
    Infineon Technologies AGIGBT Modules N-CH 1.2KV 35A
    RoHS: Compliant
    0
    • 1:$94.9300
    • 5:$93.1900
    • 10:$88.9900
    • 25:$86.0300
    BSM25GD120DN2E3224
    DISTI # IGBT1939
    Infineon Technologies AGSixpack1200V 35A Econo 2
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 10:$100.9500
    • 20:$86.2100
    BSM25GD120DN2
    DISTI # 1496948
    Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant
    0
    • 1:£73.2500
    • 5:£71.9100
    • 10:£70.6300
    BSM25GD120DN2
    DISTI # 1496948
    Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant
    0
    • 1:$150.2200
    • 5:$147.4700
    • 10:$146.4300
    图片 型号 描述
    BSM25GD120DN2

    Mfr.#: BSM25GD120DN2

    OMO.#: OMO-BSM25GD120DN2

    IGBT Modules 1200V 25A FL BRIDGE
    BSM25GAL120D

    Mfr.#: BSM25GAL120D

    OMO.#: OMO-BSM25GAL120D-1190

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    BSM25GAL120DN2

    Mfr.#: BSM25GAL120DN2

    OMO.#: OMO-BSM25GAL120DN2-1190

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    OMO.#: OMO-BSM25GB100D-1190

    Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel
    BSM25GD100D

    Mfr.#: BSM25GD100D

    OMO.#: OMO-BSM25GD100D-1190

    全新原装
    BSM25GD120DN1

    Mfr.#: BSM25GD120DN1

    OMO.#: OMO-BSM25GD120DN1-1190

    全新原装
    BSM25GD120DN2E224

    Mfr.#: BSM25GD120DN2E224

    OMO.#: OMO-BSM25GD120DN2E224-1190

    全新原装
    BSM25GP120B2

    Mfr.#: BSM25GP120B2

    OMO.#: OMO-BSM25GP120B2-1190

    全新原装
    BSM25GD120DN2BOSA1

    Mfr.#: BSM25GD120DN2BOSA1

    OMO.#: OMO-BSM25GD120DN2BOSA1-INFINEON-TECHNOLOGIES

    35 A, 1200 V, N-CHANNEL IGBT
    BSM25GD120DN2

    Mfr.#: BSM25GD120DN2

    OMO.#: OMO-BSM25GD120DN2-125

    IGBT Modules 1200V 25A FL BRIDGE
    可用性
    库存:
    Available
    订购:
    1000
    输入数量:
    BSM25GD120DN2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$94.92
    US$94.92
    5
    US$93.18
    US$465.90
    10
    US$88.98
    US$889.80
    25
    US$86.02
    US$2 150.50
    100
    US$80.09
    US$8 009.00
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