IS43LR16160H-6BLI

IS43LR16160H-6BLI
Mfr. #:
IS43LR16160H-6BLI
制造商:
ISSI
描述:
DRAM 256M, 1.8V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS, IT
生命周期:
制造商新产品。
数据表:
IS43LR16160H-6BLI 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IS43LR16160H-6BLI 更多信息
产品属性
属性值
制造商:
国际空间站
产品分类:
动态随机存取存储器
RoHS:
Y
类型:
SDRAM 移动 - DDR
数据总线宽度:
16 bit
组织:
16 M x 16
包装/案例:
BGA-60
内存大小:
256 Mbit
最大时钟频率:
166 MHz
访问时间:
6 ns
电源电压 - 最大值:
1.95 V
电源电压 - 最小值:
1.7 V
电源电流 - 最大值:
55 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
系列:
IS43LR16160H
品牌:
国际空间站
安装方式:
贴片/贴片
湿气敏感:
是的
产品类别:
动态随机存取存储器
出厂包装数量:
300
子类别:
内存和数据存储
Tags
IS43LR16160H, IS43LR161, IS43LR1, IS43LR, IS43L, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    W***g
    W***g
    BE

    Looks ok , not tested yet

    2019-09-18
    V***v
    V***v
    RU

    Alas so the goods and did not see the description to give.

    2019-05-18
    M***v
    M***v
    LV

    thank you very much

    2019-05-20
Mobile DDR SDRAM
ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
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Mfr.#: PESD1CAN,215

OMO.#: OMO-PESD1CAN-215

TVS Diodes / ESD Suppressors CAN BUS ESD PROTECT
ESD7004MUTAG

Mfr.#: ESD7004MUTAG

OMO.#: OMO-ESD7004MUTAG

TVS Diodes / ESD Suppressors Low Capacitance ESD Protection Diode
MMBT2222LT1G

Mfr.#: MMBT2222LT1G

OMO.#: OMO-MMBT2222LT1G

Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V
MMBT4403LT3G

Mfr.#: MMBT4403LT3G

OMO.#: OMO-MMBT4403LT3G

Bipolar Transistors - BJT 600mA 40V PNP
B160Q-13-F

Mfr.#: B160Q-13-F

OMO.#: OMO-B160Q-13-F

Schottky Diodes & Rectifiers 1.0A SBR 60Vrrm 42Vr 0.7Vf 0.5mA 30A
MBR130LSFT1G

Mfr.#: MBR130LSFT1G

OMO.#: OMO-MBR130LSFT1G

Schottky Diodes & Rectifiers 1A 30V
ECS-240-12-33Q-JEN-TR

Mfr.#: ECS-240-12-33Q-JEN-TR

OMO.#: OMO-ECS-240-12-33Q-JEN-TR

Crystals 24.000MHz 12pF AEC-Q200 -40C +85C
MPZ1608S601ATD25

Mfr.#: MPZ1608S601ATD25

OMO.#: OMO-MPZ1608S601ATD25

Ferrite Beads 0603 600ohms 1000mA Power Line AEC-Q200
MPZ1608S601ATD25

Mfr.#: MPZ1608S601ATD25

OMO.#: OMO-MPZ1608S601ATD25-TDK

EMI Filter Beads, Chips & Arrays 0603 600ohms 1000mA Power Line AEC-Q200
可用性
库存:
280
订购:
2263
输入数量:
IS43LR16160H-6BLI的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$7.24
US$7.24
10
US$6.66
US$66.60
25
US$6.50
US$162.50
100
US$5.83
US$583.00
250
US$5.66
US$1 415.00
500
US$5.38
US$2 690.00
1000
US$5.19
US$5 190.00
2500
US$4.78
US$11 950.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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