IPB60R600CP

Mfr. #:: IPB60R600CP
制造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
生命周期:: 制造商新产品。
数据表:: IPB60R600CP 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: CoolMOS CP

打包: 卷轴

部分别名: IPB60R600CPATMA1 SP000405892

单位重量: 0.139332 oz

安装方式: 贴片/贴片

商品名: 酷摩

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 60 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 17 ns

上升时间: 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 6.1 A

Vds-漏-源-击穿电压: 600 V

VGS-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 600 mOhms

晶体管极性: N通道

典型关断延迟时间: 75 ns

典型开启延迟时间: 17 ns

Qg-门电荷: 21 nC

通道模式: 增强

Tags: IPB60R600C, IPB60R6, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R600CP 描述

***et: Trans MOSFET N-CH 650V 6.1A 3-Pin TO-263 T/R

***i-Key: MOSFET N-CH 600V 6.1A TO263

***ark: MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.1A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.1A; Package / Case:TO-263; Power Dissipation Pd:60W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.54ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:6.1A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:650V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET

Market price

型号	制造商	描述	库存	价格
IPB60R600CPATMA1 DISTI # IPB60R600CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.1A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB60R600CPATMA1 DISTI # IPB60R600CPATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.1A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB60R600CPATMA1 DISTI # IPB60R600CPATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.1A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB60R600CP	Infineon Technologies AG	Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	6970	1000:$0.7100 500:$0.7400 100:$0.7700 25:$0.8100 1:$0.8700
IPB60R600CP DISTI # 726-IPB60R600CP	Infineon Technologies AG	MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP RoHS: Compliant	874	1:$2.0800 10:$1.6100 100:$1.4600 250:$1.3100 500:$1.1300 1000:$0.9540 2000:$0.7930 5000:$0.7750 10000:$0.7460

图片	型号	描述
	Mfr.#: IPB60R299CPAATMA1 OMO.#: OMO-IPB60R299CPAATMA1	MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA
	Mfr.#: IPB60R199CP OMO.#: OMO-IPB60R199CP	MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
	Mfr.#: IPB60R280CFD7ATMA1 OMO.#: OMO-IPB60R280CFD7ATMA1	MOSFET
	Mfr.#: IPB60R210CFD7ATMA1 OMO.#: OMO-IPB60R210CFD7ATMA1	MOSFET
	Mfr.#: IPB60R199CPA OMO.#: OMO-IPB60R199CPA	MOSFET N-Ch 600V 16A D2PAK-2 CoolMOS CPA
	Mfr.#: IPB60R190C6 6R190C6 OMO.#: OMO-IPB60R190C6-6R190C6-1190	全新原装
	Mfr.#: IPB600N25N3 G OMO.#: OMO-IPB600N25N3-G-1190	Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G)
	Mfr.#: IPB60R125C6ATMA1 OMO.#: OMO-IPB60R125C6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 30A TO263
	Mfr.#: IPB60R380C6 . OMO.#: OMO-IPB60R380C6--1190	全新原装
	Mfr.#: IPB60R380C6S OMO.#: OMO-IPB60R380C6S-1190	全新原装

IPB60R600CP

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes