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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IRF610LPBF DISTI # IRF610LPBF-ND | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 RoHS: Compliant Min Qty: 1000 Container: Tube | Temporarily Out of Stock |
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| IRF610LPBF DISTI # IRF610LPBF | Vishay Intertechnologies | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF610LPBF) RoHS: Not Compliant Min Qty: 1000 Container: Bulk | Americas - 0 | |
| IRF610LPBF DISTI # 844-IRF610LPBF | Vishay Intertechnologies | MOSFET N-Chan 200V 3.3 Amp RoHS: Compliant | 0 | |
| IRF610LPBF | Vishay Intertechnologies | MOSFET N-Chan 200V 3.3 Amp RoHS: Compliant | Americas - |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: IRF610LPBF OMO.#: OMO-IRF610LPBF |
MOSFET RECOMMENDED ALT 844-IRF610SPBF |
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Mfr.#: IRF610B OMO.#: OMO-IRF610B-1190 |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 |
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Mfr.#: IRF610N OMO.#: OMO-IRF610N-1190 |
全新原装 |
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Mfr.#: IRF610S OMO.#: OMO-IRF610S-VISHAY |
MOSFET N-CH 200V 3.3A D2PAK |
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Mfr.#: IRF613 OMO.#: OMO-IRF613-1190 |
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IRF614B OMO.#: OMO-IRF614B-1190 |
Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IRF614N OMO.#: OMO-IRF614N-1190 |
全新原装 |
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Mfr.#: IRF614STRR OMO.#: OMO-IRF614STRR-VISHAY |
MOSFET N-CH 250V 2.7A D2PAK |
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Mfr.#: IRF614STRRPBF OMO.#: OMO-IRF614STRRPBF-VISHAY |
IGBT Transistors MOSFET N-Chan 250V 2.7 Amp |
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Mfr.#: IRF610 OMO.#: OMO-IRF610-VISHAY |
MOSFET N-CH 200V 3.3A TO-220AB |