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T2G4003532-FL

T2G4003532-FL
Mfr. #:
T2G4003532-FL
制造商:
Qorvo
描述:
RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
生命周期:
制造商新产品。
数据表:
T2G4003532-FL 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
T2G4003532-FL 更多信息
产品属性
属性值
制造商：
科沃
产品分类：
射频 JFET 晶体管
RoHS：
Y
晶体管类型：
HEMT
技术：
氮化镓碳化硅
获得：
16 dB
晶体管极性：
N通道
输出功率：
30 W
打包：
托盘
工作频率：
3.5 GHz
系列：
T2G
类型：
氮化镓碳化硅 HEMT
品牌：
科沃
湿气敏感：
是的
产品类别：
射频 JFET 晶体管
出厂包装数量：
36
子类别：
晶体管
第 # 部分别名：
1099983
Tags
T2G4003, T2G4, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
T2G4003532-FL
DISTI # 772-T2G4003532-FL		QorvoRF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
RoHS: Compliant		35
  • 1:$205.5000
  • 25:$185.4600
图片 型号 描述
T2G4003532-FS

Mfr.#: T2G4003532-FS

OMO.#: OMO-T2G4003532-FS

 RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
T2G4005528-FS

Mfr.#: T2G4005528-FS

OMO.#: OMO-T2G4005528-FS

 RF JFET Transistors DC-3.5GHz 55 Watt 28V GaN Flangeless
T2G4005528-FS

Mfr.#: T2G4005528-FS

OMO.#: OMO-T2G4005528-FS-318

 RF JFET Transistors DC-3.5GHz 55 Watt 28V GaN Flangeless
T2G4003532-FS

Mfr.#: T2G4003532-FS

OMO.#: OMO-T2G4003532-FS-318

 RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
T2G4005528-FS, EVAL BOARD

Mfr.#: T2G4005528-FS, EVAL BOARD

OMO.#: OMO-T2G4005528-FS-EVAL-BOARD-1152

 RF Development Tools DC-3.5GHz 55 Watt 28V GaN FS Eval Brd
T2G4005528-FS2

Mfr.#: T2G4005528-FS2

OMO.#: OMO-T2G4005528-FS2-1190

 全新原装
T2G4003532-FS, EVAL BOARD

Mfr.#: T2G4003532-FS, EVAL BOARD

OMO.#: OMO-T2G4003532-FS-EVAL-BOARD-1152

 RF Development Tools DC-3.5GHz 35 Watt 32V GaN FS Eval Brd
T2G4005528

Mfr.#: T2G4005528

OMO.#: OMO-T2G4005528-1190

 全新原装
T2G4005528-FS, EVAL BOAR

Mfr.#: T2G4005528-FS, EVAL BOAR

OMO.#: OMO-T2G4005528-FS-EVAL-BOAR-1190

 全新原装
T2G4005528-FS-EVB2

Mfr.#: T2G4005528-FS-EVB2

OMO.#: OMO-T2G4005528-FS-EVB2-1190

 全新原装
可用性
库存:
Available
订购:
1993
输入数量:
T2G4003532-FL的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$205.50
US$205.50
25
US$185.46
US$4 636.50
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