NGTB40N65FL2WG

Mfr. #:: NGTB40N65FL2WG
制造商:: ON Semiconductor
描述:: IGBT Transistors 650V/40A FAST IGBT FSII T
生命周期:: 制造商新产品。
数据表:: NGTB40N65FL2WG 数据表
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HTML Datasheet:: NGTB40N65FL2WG Datasheet NGTB40N65FL2WG Datasheet (P4-P6)NGTB40N65FL2WG Datasheet (P7-P9)NGTB40N65FL2WG Datasheet (P10)
ECAD Model:
更多信息:: NGTB40N65FL2WG 更多信息

产品属性
属性值

制造商：: 安森美半导体

产品分类：: IGBT晶体管

RoHS：: Y

技术：: 硅

包装/案例：: TO-247-3

安装方式：: 通孔

配置：: 单身的

集电极-发射极电压 VCEO 最大值：: 650 V

集电极-发射极饱和电压：: 2.1 V

最大栅极发射极电压：: 20 V

25 C 时的连续集电极电流：: 80 A

Pd - 功耗：: 366 W

最低工作温度：: - 55 C

最高工作温度：: + 175 C

打包：: 管子

连续集电极电流 Ic 最大值：: 80 A

品牌：: 安森美半导体

栅极-发射极漏电流：: 200 nA

产品类别：: IGBT晶体管

出厂包装数量：: 30

子类别：: IGBT

单位重量：: 1.340411 oz

Tags: NGTB40N65, NGTB40N6, NGTB40, NGTB4, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB40N65FL2WG 描述

***ark: Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ied Electronics & Automation: NGTB40N65FL2WG; IGBT Transistor; 80 A 650 V; 1MHz; 3-Pin TO-247

***ical: Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

NGTB40N65FL2WG 更多信息

Field Stop II Series IGBTs: ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

型号	制造商	描述	库存	价格
NGTB40N65FL2WG DISTI # V99:2348_07299939	ON Semiconductor	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	140	2500:$0.7536 1000:$0.7591 500:$0.7755 250:$0.7851 100:$0.7895 10:$0.8003 1:$2.8755
NGTB40N65FL2WG DISTI # NGTB40N65FL2WGOS-ND	ON Semiconductor	IGBT 650V 80A 366W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	90In Stock	1020:$2.9106 510:$3.4511 120:$4.0541 30:$4.6777 1:$5.5100
NGTB40N65FL2WG DISTI # 25863325	ON Semiconductor	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	140	3:$2.8755
NGTB40N65FL2WG DISTI # NGTB40N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Bulk (Alt: NGTB40N65FL2WG) Min Qty: 114 Container: Bulk	Americas - 0
NGTB40N65FL2WG DISTI # NGTB40N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: NGTB40N65FL2WG) RoHS: Compliant Min Qty: 180 Container: Tube	Asia - 0	180:$3.9600 360:$3.8077 540:$3.6667 900:$3.5357 1800:$3.4138 4500:$3.3000 9000:$3.2459
NGTB40N65FL2WG DISTI # 31Y3222	ON Semiconductor	IGBT Single Transistor, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 RoHS Compliant: Yes	174	5000:$2.5400 2500:$2.6400 1000:$2.7800 500:$3.2900 250:$3.6700 100:$4.0600 10:$4.4600 1:$5.5500
NGTB40N65FL2WG DISTI # 70600204	ON Semiconductor	NGTB40N65FL2WG,IGBT Transistor,80 A 650 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$3.3700 10:$3.0000 20:$2.9000 50:$2.8400 100:$2.7900
NGTB40N65FL2WG DISTI # 863-NGTB40N65FL2WG	ON Semiconductor	IGBT Transistors 650V/40A FAST IGBT FSII T RoHS: Compliant	165	1:$5.2500 10:$4.4600 100:$3.8700 250:$3.6700 500:$3.2900 1000:$2.7800 2500:$2.6400
NGTB40N65FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	3111	1000:$2.9000 500:$3.0500 100:$3.1700 25:$3.3100 1:$3.5600
NGTB40N65FL2WG DISTI # 8427905P	ON Semiconductor	IGBT FIELD STOP II 650V 40A DIODE TO247, TU	122	100:£2.9000 50:£3.1950 20:£3.2700 10:£3.3400
NGTB40N65FL2WG	ON Semiconductor		2271
NGTB40N65FL2WG DISTI # 2452040	ON Semiconductor	650V/40A FAST IGBT FSII T RoHS: Compliant	174	500:£2.2600 250:£2.5200 100:£2.6600 10:£3.0600 1:£4.4400
NGTB40N65FL2WG DISTI # 2452040	ON Semiconductor	650V/40A FAST IGBT FSII T RoHS: Compliant	174	2500:$3.9800 1000:$4.1900 500:$4.9600 250:$5.5300 100:$5.8300 10:$6.7200 1:$7.9100

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