IPI90R800C3XKSA1

Mfr. #:: IPI90R800C3XKSA1
制造商:: Infineon Technologies
描述:: MOSFET LOW POWER_LEGACY
生命周期:: 制造商新产品。
数据表:: IPI90R800C3XKSA1 数据表
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ECAD Model:

产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 通孔

包装/案例：: TO-262-3

打包：: 管子

高度：: 9.45 mm

长度：: 10.2 mm

宽度：: 4.5 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: IPI90R800C3XKSA1 SP000683086

单位重量：: 0.084199 oz

Tags: IPI90R, IPI9, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPI90R800C3XKSA1 描述

***Components: In a Tube of 500, N-Channel MOSFET, 6.9 A, 900 V, 3-Pin I2PAK Infineon IPI90R800C3XKSA1

***ical: Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-262 Tube

***et Europe: Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-262

***i-Key: MOSFET N-CH 900V 6.9A TO-262

***ark: MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:900V; Current, Id Cont:6.9A; On State Resistance:0.8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262;;RoHS Compliant: Yes

***nell: MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:900V; Current, Id Cont:6.9A; On State Resistance:0.8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

Market price

型号	制造商	描述	库存	价格
IPI90R800C3XKSA1 DISTI # IPI90R800C3XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 900V 6.9A TO-262 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPI90R800C3XKSA1 DISTI # IPI90R800C3XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IPI90R800C3XKSA1) Min Qty: 305 Container: Bulk	Americas - 0	3050:$1.0409 1525:$1.0599 915:$1.0969 610:$1.1379 305:$1.1809
IPI90R800C3 DISTI # 726-IPI90R800C3	Infineon Technologies AG	MOSFET N-Ch 900V 6.9A I2PAK-3 CoolMOS C3 RoHS: Compliant	266	1:$2.2200 10:$1.8900 100:$1.5100 500:$1.3200
IPI90R800C3XKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPI90R800C3XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	16500	1000:$1.0800 500:$1.1400 100:$1.1800 25:$1.2300 1:$1.3300
IPI90R800C3XKSA1 DISTI # IPI90R800C3XKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,900V,4.4A,104W,PG-TO262-3	483	50:$1.2500 10:$1.3400 3:$1.4900 1:$1.6800

IPI90R800C3XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes