FDR8308P

Mfr. #:: FDR8308P
制造商:: ON Semiconductor
描述:: MOSFET 2P-CH 20V 3.2A SSOT-8
生命周期:: 制造商新产品。
数据表:: FDR8308P 数据表
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HTML Datasheet:: FDR8308P Datasheet FDR8308P Datasheet (P4-P5)
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Tags: FDR8308, FDR830, FDR83, FDR8, FDR

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDR8308P 描述

***et: TRANS MOSFET P-CH 20V 3.2A 8PIN SUPERSOT

***ark: MOSFET; Transistor Polarity:Dual P Channel; Continuous Drain Current, Id:3.2A; On-Resistance, Rds(on):0.05ohm; Package/Case:SuperSOT-8; Drain-Source Breakdown Voltage:-20V; Gate-Source Voltage:-1.5V; Leaded Process Compatible:No RoHS Compliant: No

***nell: MOSFET, DUAL, PP, SUPERSOT-8; Transistor type:MOSFET; Current, Id cont:3.2A; Resistance, Rds on:0.05ohm; Case style:SuperSOT-8; Current, Idm pulse:20A; Marking, SMD:FDR8308P; Pins, No. of:8; Power dissipation:0.8W; Power, Pd:0.8W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:Dual P; Transistors, No. of:2; Voltage, Vds:20V; Voltage, Vds max:20V; Voltage, Vgs th max:-1.5V

***ure Electronics: Si2323DS Series 20 V 3.7 A 39 mOhm Surface Mount P-Channel Mosfet - SOT-23-3

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -20V,RDS(ON) 0.031Ohm,ID -3.7A,TO-236 (SOT-23),PD 0.75W

*** Source Electronics: MOSFET P-CH 20V 3.7A SOT23-3 / Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R

***enic: 20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ment14 APAC: MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.7A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V

***ark: P Channel Mosfet, -20V, 4.7A To-236, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.039Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No

*** Source Electronics: Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.6A SOT-23

***ure Electronics: Single P-Channel 20 V 0.81 W 15.4 nC Silicon Surface Mount Mosfet - SOT-23

***ment14 APAC: MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Source Voltage Vds:-20V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.81 W

***nell: MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 810mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***enic: 20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ure Electronics: Single P-Channel 20 V 0.039 O 19 nC Surface Mount Power Mosfet - SOT-23

***roFlash: Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-4700mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.068ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V ;RoHS Compliant: Yes

***nell: MOSFET, P CH, 20V, 4.7A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.039ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:750mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to +150°C

***roFlash: P-Channel 20 V 42.5 mO Surface Mount Enhancement Mode Mosfet - SOT-23

***ment14 APAC: MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.9 W

***nell: MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -550mV; Power Dissipation Pd: 900mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: -8V

***emi: Power MOSFET 20V 5.9A 36 mOhm Single P-Channel WDFN6 with ESD

***Yang: Trans MOSFET P-CH 20V 5.9A 6-Pin WDFN T/R - Tape and Reel

***r Electronics: Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-5.9A; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

*** Source Electronics: Trans MOSFET P-CH 20V 4A 6-Pin TSOT-23 T/R / MOSFET P-CH 20V 4A 6SSOT

***ment14 APAC: MOSFET, P-CH, -20V, -4A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance

***el Electronic: Chip Resistor - Surface Mount 820Ohm 1% 200 ppm/°C Thick Film Tape & Reel 1 (Unlimited) Thick Film Resistors - SMD 0402 1% 820ohm Anti-Sulfur AEC-Q200

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Market price

型号	制造商	描述	库存	价格
FDR8308P DISTI # FDR8308PTR-ND	ON Semiconductor	MOSFET 2P-CH 20V 3.2A SSOT-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDR8308P DISTI # FDR8308PCT-ND	ON Semiconductor	MOSFET 2P-CH 20V 3.2A SSOT-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDR8308P DISTI # FDR8308PDKR-ND	ON Semiconductor	MOSFET 2P-CH 20V 3.2A SSOT-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDR8308P DISTI # FDR8308P	ON Semiconductor	TRANS MOSFET P-CH 20V 3.2A 8PIN SUPERSOT - Bulk (Alt: FDR8308P) Min Qty: 1137 Container: Bulk	Americas - 0	11370:$0.2709 5685:$0.2779 3411:$0.2819 2274:$0.2849 1137:$0.2869
FDR8308P DISTI # 512-FDR8308P	ON Semiconductor	MOSFET SSOT-8 P-CH DUAL -20 RoHS: Compliant	0
FDR8308P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	18650	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600

图片	型号	描述
	Mfr.#: FDR838P OMO.#: OMO-FDR838P	MOSFET SSOT-8 P-CH -20V
	Mfr.#: FDR8305N_NL OMO.#: OMO-FDR8305N-NL-1190	全新原装
	Mfr.#: FDR8308P-NL OMO.#: OMO-FDR8308P-NL-1190	全新原装
	Mfr.#: FDR838P OMO.#: OMO-FDR838P-ON-SEMICONDUCTOR	MOSFET P-CH 20V 8A SSOT-8
	Mfr.#: FDR838P , 1N5251B-TAP OMO.#: OMO-FDR838P-1N5251B-TAP-1190	全新原装
	Mfr.#: FDR840P-ND(FDS840P) OMO.#: OMO-FDR840P-ND-FDS840P--1190	全新原装
	Mfr.#: FDR840P-NL OMO.#: OMO-FDR840P-NL-1190	全新原装
	Mfr.#: FDR840P. OMO.#: OMO-FDR840P--1190	全新原装
	Mfr.#: FDR842T OMO.#: OMO-FDR842T-1190	全新原装
	Mfr.#: FDR858P OMO.#: OMO-FDR858P-ON-SEMICONDUCTOR	MOSFET P-CH 30V 8A SSOT-8

FDR8308P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes