SI4210DY-T1-GE3

SI4210DY-T1-GE3
Mfr. #:
SI4210DY-T1-GE3
制造商:
Vishay
描述:
MOSFET 2N-CH 30V 6.5A 8-SOIC
生命周期:
制造商新产品。
数据表:
SI4210DY-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
威世硅
产品分类
FET - 阵列
系列
沟槽FETR
打包
Digi-ReelR 替代包装
部分别名
SI4210DY-GE3
单位重量
0.017870 oz
安装方式
贴片/贴片
包装盒
8-SOIC (0.154", 3.90mm Width)
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
2 Channel
供应商-设备-包
8-SO
配置
双重的
FET型
2 N-Channel (Dual)
最大功率
2.7W
晶体管型
2 N-Channel
漏源电压 Vdss
30V
输入电容-Ciss-Vds
445pF @ 15V
FET-Feature
逻辑电平门
Current-Continuous-Drain-Id-25°C
6.5A
Rds-On-Max-Id-Vgs
35.5 mOhm @ 5A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
栅极电荷-Qg-Vgs
12nC @ 10V
钯功耗
2.7 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
6.5 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
35.5 mOhms
晶体管极性
N通道
Tags
SI4210DY, SI4210D, SI4210, SI421, SI42, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 5.2A 8-Pin SOIC N T/R
***ark
Dual N Channel Mosfet, 30V, 6.5A
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, 6.5A; Transi; DUAL N CHANNEL MOSFET, 30V, 6.5A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:5.2A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0295ohm; Rds(on) Test Voltage Vgs:10V
型号 制造商 描述 库存 价格
SI4210DY-T1-GE3
DISTI # SI4210DY-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
855In Stock
  • 500:$0.3966
  • 100:$0.5353
  • 10:$0.6940
  • 1:$0.7900
SI4210DY-T1-GE3
DISTI # SI4210DY-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$0.2791
SI4210DY-T1-GE3
DISTI # SI4210DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
    SI4210DY-T1-GE3
    DISTI # 781-SI4210DY-GE3
    Vishay IntertechnologiesMOSFET 30V 6.5A 2.7W 35.5mohm @ 10V
    RoHS: Compliant
    2500
    • 1:$0.7000
    • 10:$0.5590
    • 100:$0.4240
    • 500:$0.3500
    • 1000:$0.2800
    • 2500:$0.2540
    • 5000:$0.2370
    • 10000:$0.2280
    • 25000:$0.2190
    图片 型号 描述
    SI4210D-GMR

    Mfr.#: SI4210D-GMR

    OMO.#: OMO-SI4210D-GMR-1190

    全新原装
    SI4210DGM

    Mfr.#: SI4210DGM

    OMO.#: OMO-SI4210DGM-1190

    全新原装
    SI4210DY

    Mfr.#: SI4210DY

    OMO.#: OMO-SI4210DY-1190

    全新原装
    SI4210DY-T1-E3

    Mfr.#: SI4210DY-T1-E3

    OMO.#: OMO-SI4210DY-T1-E3-1190

    全新原装
    SI4210DY-T1-GE3

    Mfr.#: SI4210DY-T1-GE3

    OMO.#: OMO-SI4210DY-T1-GE3-VISHAY

    MOSFET 2N-CH 30V 6.5A 8-SOIC
    可用性
    库存:
    Available
    订购:
    2500
    输入数量:
    SI4210DY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.33
    US$0.33
    10
    US$0.31
    US$3.12
    100
    US$0.30
    US$29.57
    500
    US$0.28
    US$139.60
    1000
    US$0.26
    US$262.80
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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