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FDMD86100

FDMD86100
Mfr. #:
FDMD86100
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET FET 100V 10.5 MOHM PQFN56
生命周期:
制造商新产品。
数据表:
FDMD86100 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FDMD86100 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
Power-33-8
通道数：
2 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
100 V
Id - 连续漏极电流：
39 A
Rds On - 漏源电阻：
10.5 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
21 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
33 W
配置：
双重的
频道模式：
增强
商品名：
PowerTrench 电源夹
打包：
卷轴
高度：
0.8 mm
长度：
3.3 mm
系列：
FDMD86100
晶体管类型：
2 N-Channel
宽度：
3.3 mm
品牌：
安森美半导体/飞兆半导体
秋季时间：
4.1 ns
产品类别：
MOSFET
上升时间：
4.3 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
18 ns
典型的开启延迟时间：
13 ns
单位重量：
0.003455 oz
Tags
FDMD86, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 39A, 10.5mΩ
***et Europe
Transistor MOSFET Array Dual N-CH 100V 39A 8-Pin PQFN T/R
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, COMMON SOURCE
***ical
Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R
***r Electronics
Power Field-Effect Transistor, 39A I(D), 100V, 0.0105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
***emi
N-Channel PowerTrench® MOSFET 100V, 11.2A, 9.8mΩ
***ure Electronics
Single N-Channel 100 V 17 mOhm 41 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 100V 11.2A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
MOSFET, N CH, 100V, 11.2A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:50A
***emi
Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ
*** Source Electronics
Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 12.5A DPAK-3
*** Stop Electro
Power Field-Effect Transistor, 12.5A I(D), 100V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***et Japan
Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R
***emi
Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL
***ment14 APAC
MOSFET, DUAL N-CH, 100V, 48A, 50W, PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:48A; Source Voltage Vds:100V; On
***r Electronics
Power Field-Effect Transistor, 48A I(D), 100V, 0.0099ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
***nell
MOSFET, DUAL N-CH, 100V, 48A, 50W, PQFN; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 50W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 100 V 10 mOhm 44 nC OptiMOS™ Power Mosfet - TDSON-8
***ow.cn
BSC100N10NSFGATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R - Arrow.com
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 10.5 mOhm 40 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8
***roFlash
Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型号 制造商 描述 库存 价格
FDMD86100
DISTI # V72:2272_06337943		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC72
  • 25:$2.3110
  • 10:$2.3340
  • 1:$3.0371
FDMD86100
DISTI # V36:1790_06337943		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC0
    FDMD86100
    DISTI # FDMD86100CT-ND    		ON SemiconductorMOSFET 2N-CH 100V
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDMD86100
      DISTI # FDMD86100DKR-ND      		ON SemiconductorMOSFET 2N-CH 100V
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDMD86100
        DISTI # FDMD86100TR-ND        		ON SemiconductorMOSFET 2N-CH 100V
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
        • 3000:$1.4746
        FDMD86100
        DISTI # 25921891        		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC72
        • 25:$2.3110
        • 10:$2.3340
        • 5:$3.0371
        FDMD86100
        DISTI # FDMD86100        		ON SemiconductorTrans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Bulk (Alt: FDMD86100)
        RoHS: Compliant
        Min Qty: 214
        Container: Bulk        		Americas - 0
        • 1070:$1.3900
        • 2140:$1.3900
        • 214:$1.4900
        • 428:$1.4900
        • 642:$1.4900
        FDMD86100
        DISTI # FDMD86100        		ON SemiconductorTrans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD86100)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 0
        • 3000:$1.2900
        • 6000:$1.2900
        • 12000:$1.2900
        • 18000:$1.2900
        • 30000:$1.2900
        FDMD86100
        DISTI # 45Y5126        		ON SemiconductorFET 80V 10.5 MOHM PQFN56 / REEL0
        • 30000:$1.3000
        • 18000:$1.3200
        • 12000:$1.3700
        • 6000:$1.4800
        • 3000:$1.5800
        • 1:$1.6600
        FDMD86100
        DISTI # 512-FDMD86100        		ON SemiconductorMOSFET FET 80V 10.5 MOHM PQFN56
        RoHS: Compliant        		2991
        • 1:$2.7800
        • 10:$2.3700
        • 100:$2.0500
        • 250:$1.9400
        • 500:$1.7400
        • 1000:$1.4700
        • 3000:$1.4000
        FDMD86100Fairchild Semiconductor CorporationPower Field-Effect Transistor
        RoHS: Compliant        		1078
        • 1000:$1.5400
        • 500:$1.6200
        • 100:$1.6900
        • 25:$1.7600
        • 1:$1.9000
        图片 型号 描述
        FDMD8540L

        Mfr.#: FDMD8540L

        OMO.#: OMO-FDMD8540L

        		 MOSFET 40V Dual N-Channel PowerTrench MOSFET
        ADG1411YRUZ

        Mfr.#: ADG1411YRUZ

        OMO.#: OMO-ADG1411YRUZ

        		 Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
        ADG1411YRUZ

        Mfr.#: ADG1411YRUZ

        OMO.#: OMO-ADG1411YRUZ-ANALOG-DEVICES

        		 Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
        FDMD8540L

        Mfr.#: FDMD8540L

        OMO.#: OMO-FDMD8540L-ON-SEMICONDUCTOR

        		 MOSFET 2N-CH 40V 33A POWER
        可用性
        库存:
        Available
        订购:
        1985
        输入数量:
        FDMD86100的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$2.78
        US$2.78
        10
        US$2.37
        US$23.70
        100
        US$2.05
        US$205.00
        250
        US$1.94
        US$485.00
        500
        US$1.74
        US$870.00
        1000
        US$1.47
        US$1 470.00
        由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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