IRLU3103PBF

IRLU3103PBF
Mfr. #:
IRLU3103PBF
制造商:
Infineon / IR
描述:
MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl
生命周期:
制造商新产品。
数据表:
IRLU3103PBF 数据表
交货:
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支付:
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HTML Datasheet:
IRLU3103PBF DatasheetIRLU3103PBF Datasheet (P4-P6)IRLU3103PBF Datasheet (P7-P9)IRLU3103PBF Datasheet (P10-P11)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-251-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
46 A
Rds On - 漏源电阻:
24 mOhms
Vgs - 栅源电压:
16 V
Qg - 门电荷:
33.3 nC
Pd - 功耗:
69 W
配置:
单身的
打包:
管子
高度:
6.22 mm
长度:
6.73 mm
晶体管类型:
1 N-Channel
宽度:
2.38 mm
品牌:
英飞凌/红外
产品类别:
MOSFET
出厂包装数量:
75
子类别:
MOSFET
第 # 部分别名:
SP001578972
单位重量:
0.139332 oz
Tags
IRLU3103, IRLU310, IRLU31, IRLU3, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, 30V, 46A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:107W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:55A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; On State resistance @ Vgs = 10V:19mohm; Package / Case:IPAK; Power Dissipation Pd:107W; Power Dissipation Pd:107W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 56A;I-Pak (TO-251AA);PD 50W
***ure Electronics
Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - TO-251
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ment14 APAC
MOSFET, N, LOGIC, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:50W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:56A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***ser
MOSFETs 30V,58A,10 OHM, NCH PWR TRENCH MOSFET
***Yang
MOSFET N-CH 30V 58A I-PAK - Bulk
***i-Key Marketplace
MOSFET N-CH 30V 13A/58A IPAK
***S
new, original packaged
***el Nordic
Contact for details
***ser
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:63A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:54.6W; Voltage, Vds Max:30V
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***icroelectronics
N-channel 30 V, 0.0061 Ohm, 65 A, IPAK STripFET(TM) V Power MOSFET
*** Electronic Components
IGBT Transistors MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V
***r Electronics
Power Field-Effect Transistor, 65A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***emi
Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK
***ser
MOSFETs- Power and Small Signal NFET 30V 54A 10MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:54A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
IRLU3103PBF
DISTI # IRLU3103PBF-ND
Infineon Technologies AGMOSFET N-CH 30V 55A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube
Limited Supply - Call
    IRLU3103PBF
    DISTI # 70018570
    Infineon Technologies AGIRLU3103PBF N-channel MOSFET Transistor,55 A,30 V,3-Pin IPAK
    RoHS: Compliant
    0
    • 900:$1.6100
    • 1800:$1.5780
    • 4500:$1.5300
    • 9000:$1.4650
    • 22500:$1.3690
    IRLU3103PBFInternational Rectifier 
    RoHS: Not Compliant
    343
    • 1000:$0.5900
    • 500:$0.6200
    • 100:$0.6500
    • 25:$0.6700
    • 1:$0.7200
    IRLU3103PBF
    DISTI # 942-IRLU3103PBF
    Infineon Technologies AGMOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl
    RoHS: Compliant
    0
      IRLU3103PBF
      DISTI # 8651361
      Infineon Technologies AGMOSFET, N, 30V, 46A, I-PAK
      RoHS: Compliant
      0
      • 1:$1.9800
      • 10:$1.6300
      • 100:$1.3200
      • 500:$1.1800
      • 1000:$1.0500
      • 2500:$0.9730
      • 5000:$0.9400
      图片 型号 描述
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      MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl
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      全新原装
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      IRLU3103PBF

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      OMO.#: OMO-IRLU3103PBF-INFINEON-TECHNOLOGIES

      Darlington Transistors MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl
      IRLU3715ZPBF

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      IGBT Transistors MOSFET MOSFT 20V 49A 11mOhm 7.2nC Qg log lvl
      IRLU3714ZPBF

      Mfr.#: IRLU3714ZPBF

      OMO.#: OMO-IRLU3714ZPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET MOSFT 20V 37A 15mOhm 4.7nC Qg log lvl
      IRLU3303PBF

      Mfr.#: IRLU3303PBF

      OMO.#: OMO-IRLU3303PBF-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET MOSFT 30V 33A 31mOhm 17.3nC LogLvl
      可用性
      库存:
      Available
      订购:
      5500
      输入数量:
      IRLU3103PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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