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IGZ75N65H5XKSA1

IGZ75N65H5XKSA1
Mfr. #:
IGZ75N65H5XKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IGZ75N65H5XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IGZ75N65H5XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
技术：
硅
包装/案例：
TO-247-4
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.65 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
119 A
Pd - 功耗：
395 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
TRENCHSTOP 5 H5
打包：
管子
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
240
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IGZ75N65H5 SP001160054
Tags
IGZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube
***ronik
IGBT 650V 75A 1,65V TO247-3
***i-Key
IGBT 650V 75A SGL TO-247-4
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
型号 制造商 描述 库存 价格
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V 75A SGL TO-247-4
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.7490
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube - Bulk (Alt: IGZ75N65H5XKSA1)
Min Qty: 115
Container: Bulk		Americas - 0
  • 1150:$2.6900
  • 575:$2.7900
  • 345:$2.8900
  • 230:$2.9900
  • 115:$3.0900
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube - Rail/Tube (Alt: IGZ75N65H5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$3.1900
  • 2400:$3.1900
  • 960:$3.3900
  • 480:$3.4900
  • 240:$3.5900
IGZ75N65H5XKSA1
DISTI # SP001160054		Infineon Technologies AGTrans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube (Alt: SP001160054)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.6900
  • 500:€2.7900
  • 100:€2.8900
  • 50:€2.9900
  • 25:€3.0900
  • 10:€3.3900
  • 1:€4.1900
IGZ75N65H5XKSA1
DISTI # 726-IGZ75N65H5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
  • 1:$6.0400
  • 10:$5.4600
  • 25:$5.2000
  • 100:$4.5200
  • 250:$4.3200
  • 500:$3.9300
IGZ75N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 119A I(C), 650V V(BR)CES, N-Channel
RoHS: Not Compliant		4170
  • 1000:$2.8800
  • 500:$3.0300
  • 100:$3.1600
  • 25:$3.2900
  • 1:$3.5500
IGZ75N65H5XKSA1
DISTI # IGZ75N65H5		Infineon Technologies AG650V 119A 395W TO247-4
RoHS: Compliant		235
  • 1:€6.6500
  • 10:€3.6500
  • 50:€2.6500
  • 100:€2.5500
图片 型号 描述
IGZ75N65H5XKSA1

Mfr.#: IGZ75N65H5XKSA1

OMO.#: OMO-IGZ75N65H5XKSA1

 IGBT Transistors IGBT PRODUCTS
IGZ75N65H5

Mfr.#: IGZ75N65H5

OMO.#: OMO-IGZ75N65H5-1190

 650V,85A,High Speed IGBT
IGZ75N65H5XKSA1

Mfr.#: IGZ75N65H5XKSA1

OMO.#: OMO-IGZ75N65H5XKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V 75A SGL TO-247-4
可用性
库存:
Available
订购:
5500
输入数量:
IGZ75N65H5XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$6.04
US$6.04
10
US$5.46
US$54.60
25
US$5.20
US$130.00
100
US$4.52
US$452.00
250
US$4.32
US$1 080.00
500
US$3.93
US$1 965.00
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