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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BUZ31 H3045A DISTI # BUZ31H3045ACT-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 Min Qty: 1 Container: Cut Tape (CT) | 1076In Stock |
|
| BUZ31 H3045A DISTI # BUZ31H3045ADKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 Min Qty: 1 Container: Digi-Reel® | 1076In Stock |
|
| BUZ31 H3045A DISTI # BUZ31H3045ATR-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 Min Qty: 1000 Container: Tape & Reel (TR) | 1000In Stock |
|
| BUZ31HXKSA1 DISTI # BUZ31HXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO220-3 Min Qty: 500 Container: Tube | Limited Supply - Call | |
| BUZ31H3046XKSA1 DISTI # BUZ31H3046XKSA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO262-3 Min Qty: 1000 Container: Tube | Limited Supply - Call | |
| BUZ31H3046 DISTI # BUZ31H3046 | Infineon Technologies AG | Power Transistor N Channel Enhancement 200V 14.5A 3-Pin TO-262 Through Hole - Bulk (Alt: BUZ31H3046) Min Qty: 500 Container: Bulk | Americas - 0 |
|
| BUZ31HXKSA1 DISTI # BUZ31HXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 14.5A 3-Pin TO-220 - Bulk (Alt: BUZ31HXKSA1) RoHS: Compliant Min Qty: 500 Container: Bulk | Americas - 0 |
|
| BUZ31H3046XKSA1 DISTI # BUZ31H3046XKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 14.5A 3-Pin TO-262 Tube - Bulk (Alt: BUZ31H3046XKSA1) Min Qty: 500 Container: Bulk | Americas - 0 |
|
| BUZ31H3046XKSA1 DISTI # 726-BUZ31H3046XKSA1 | Infineon Technologies AG | MOSFET N-Ch 200V 14.5A I2PAK-3 RoHS: Compliant | 93 |
|
| BUZ31H3046 | Infineon Technologies AG | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, N-Channel, MOSFET RoHS: Not Compliant | 700 |
|
| BUZ31H3046XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, N-Channel, MOSFET RoHS: Compliant | 8791 |
|
| BUZ31HXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, N-Channel, MOSFET RoHS: Compliant | 6500 |
|
| BUZ31H | Infineon Technologies AG | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 146 | |
| BUZ31H3046 | ISC | I²PAK/TO-262 | 5000 |
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: BUZ31 OMO.#: OMO-BUZ31 |
MOSFET N-Ch 200V 14.5A TO220-3 |
|
Mfr.#: BUZ304 OMO.#: OMO-BUZ304-1190 |
全新原装 |
|
|
Mfr.#: BUZ30A H3045A OMO.#: OMO-BUZ30A-H3045A-1190 |
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: BUZ30AH3045AATMA1) |
|
Mfr.#: BUZ32 E3045A |
MOSFET N-CH 200V 9.5A D2PAK |
|
|
Mfr.#: BUZ32 H3045A OMO.#: OMO-BUZ32-H3045A-1190 |
MOSFET N-Ch 200V 9.5A TO220-3 |
|
|
Mfr.#: BUZ323 OMO.#: OMO-BUZ323-1190 |
Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
|
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Mfr.#: BUZ32A OMO.#: OMO-BUZ32A-1190 |
全新原装 |
|
|
Mfr.#: BUZ32H3045AATMA1 |
MOSFET N-CH 200V 9.5A TO-263 |
|
|
Mfr.#: BUZ354 OMO.#: OMO-BUZ354-1190 |
全新原装 |
|
|
Mfr.#: BUZ30A H OMO.#: OMO-BUZ30A-H-124 |
Darlington Transistors MOSFET N-Ch 200V 21A TO220FP-3 |