SIHB15N50E-GE3

SIHB15N50E-GE3
Mfr. #:
SIHB15N50E-GE3
制造商:
Vishay
描述:
IGBT Transistors MOSFET N-Channel 500V
生命周期:
制造商新产品。
数据表:
SIHB15N50E-GE3 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
Tags
SIHB15, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 14.5A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 500 V 0.28 Ohm 66 nC 156 W Silicon Mosfet - TO-263-3
***ark
Transistor Polarity:N Channel
***
500V N-CH TO-220
***et
N-CHANNEL 500V
型号 制造商 描述 库存 价格
SIHB15N50E-GE3
DISTI # SIHB15N50E-GE3-ND
Vishay SiliconixMOSFET N-CH 500V 14.5A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk
42In Stock
  • 10:$2.7720
  • 1:$3.0700
SIHB15N50E-GE3
DISTI # SIHB15N50E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 14.5A 3-Pin D2PAK - Tape and Reel (Alt: SIHB15N50E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.0900
  • 10000:$1.0900
SIHB15N50E-GE3
DISTI # 38Y8545
Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 14.5A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:14.5A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.243ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes0
  • 1:$1.4600
  • 1000:$1.3900
  • 2000:$1.3100
  • 3000:$1.2300
SIHB15N50E-GE3
DISTI # 43Y2394
Vishay IntertechnologiesMOSFET Transistor, N Channel, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V RoHS Compliant: Yes1939
  • 1:$2.8000
  • 10:$2.3300
  • 25:$2.1500
  • 50:$1.9800
  • 100:$1.8000
  • 250:$1.6900
  • 500:$1.5800
SIHB15N50E-GE3
DISTI # 78-SIHB15N50E-GE3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
979
  • 1:$2.8000
  • 10:$2.3300
  • 100:$1.8000
  • 500:$1.5800
  • 1000:$1.5000
SIHB15N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
    SIHB15N50E-GE3
    DISTI # 2471938RL
    Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 14.5A, TO-263-3
    RoHS: Compliant
    0
    • 1:$4.4400
    • 10:$3.6900
    • 100:$2.8500
    • 500:$2.5000
    • 1000:$2.3800
    SIHB15N50E-GE3
    DISTI # 2471938
    Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 14.5A, TO-263-3
    RoHS: Compliant
    1939
    • 1:$4.4400
    • 10:$3.6900
    • 100:$2.8500
    • 500:$2.5000
    • 1000:$2.3800
    SIHB15N50E-GE3
    DISTI # 2471938
    Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 14.5A, TO-263-3
    RoHS: Compliant
    2078
    • 5:£1.8700
    • 25:£1.7600
    • 100:£1.3600
    • 250:£1.2800
    • 500:£1.1900
    图片 型号 描述
    SIHB15N60E-GE3

    Mfr.#: SIHB15N60E-GE3

    OMO.#: OMO-SIHB15N60E-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB15N65E-GE3

    Mfr.#: SIHB15N65E-GE3

    OMO.#: OMO-SIHB15N65E-GE3

    MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    SIHB15N50E-GE3

    Mfr.#: SIHB15N50E-GE3

    OMO.#: OMO-SIHB15N50E-GE3-VISHAY

    IGBT Transistors MOSFET N-Channel 500V
    SIHB15N65E-GE3

    Mfr.#: SIHB15N65E-GE3

    OMO.#: OMO-SIHB15N65E-GE3-VISHAY

    RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS
    SIHB15N60E-GE3-CUT TAPE

    Mfr.#: SIHB15N60E-GE3-CUT TAPE

    OMO.#: OMO-SIHB15N60E-GE3-CUT-TAPE-1190

    全新原装
    SIHB15N60E

    Mfr.#: SIHB15N60E

    OMO.#: OMO-SIHB15N60E-1190

    全新原装
    SIHB15N60E-GE3

    Mfr.#: SIHB15N60E-GE3

    OMO.#: OMO-SIHB15N60E-GE3-VISHAY

    MOSFET N-CH 600V 15A DPAK
    SIHB15N60EGE3

    Mfr.#: SIHB15N60EGE3

    OMO.#: OMO-SIHB15N60EGE3-1190

    Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB15N65E

    Mfr.#: SIHB15N65E

    OMO.#: OMO-SIHB15N65E-1190

    全新原装
    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    SIHB15N50E-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$1.64
    US$1.64
    10
    US$1.55
    US$15.53
    100
    US$1.47
    US$147.15
    500
    US$1.39
    US$694.90
    1000
    US$1.31
    US$1 308.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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