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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| GFD50N03 | Vishay Semiconductors | 3010 | ||
| GFD50N03A | GSI Technology | 224 |
| |
| GFD50N03 | GS Battery | Power Field-Effect Transistor, 65A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant | Europe - 3000 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: GFD50 OMO.#: OMO-GFD50-1190 |
全新原装 |
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Mfr.#: GFD50N02 OMO.#: OMO-GFD50N02-1190 |
全新原装 |
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Mfr.#: GFD50N03 OMO.#: OMO-GFD50N03-1190 |
Power Field-Effect Transistor, 65A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Mfr.#: GFD50N03A OMO.#: OMO-GFD50N03A-1190 |
全新原装 |
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Mfr.#: GFD50N03S OMO.#: OMO-GFD50N03S-1190 |
全新原装 |