AS4C64M4SA-7TCNTR

AS4C64M4SA-7TCNTR
Mfr. #:
AS4C64M4SA-7TCNTR
制造商:
Alliance Memory
描述:
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
生命周期:
制造商新产品。
数据表:
AS4C64M4SA-7TCNTR 数据表
交货:
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支付:
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ECAD Model:
更多信息:
AS4C64M4SA-7TCNTR 更多信息
产品属性
属性值
制造商:
联盟记忆
产品分类:
动态随机存取存储器
RoHS:
Y
系列:
AS4C64M4SA
打包:
卷轴
品牌:
联盟记忆
湿气敏感:
是的
产品类别:
动态随机存取存储器
出厂包装数量:
1000
子类别:
内存和数据存储
Tags
AS4C64M4SA-7, AS4C64M4, AS4C6, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
DRAM Chip SDRAM 256Mbit 64M X 4 54-Pin TSOP-II T/R
***metry Electronics
SDRAM 256MB 143Mhz 3.3V 64M x 4 54pin TSOP II
***i-Key
IC DRAM 256MBIT PAR 54TSOP II
AS4C Series SDRAM
Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More
图片 型号 描述
AS4C64M4SA-7TCNTR

Mfr.#: AS4C64M4SA-7TCNTR

OMO.#: OMO-AS4C64M4SA-7TCNTR

DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
AS4C64M4SA-7TINTR

Mfr.#: AS4C64M4SA-7TINTR

OMO.#: OMO-AS4C64M4SA-7TINTR

DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM
AS4C64M4SA-6TINTR

Mfr.#: AS4C64M4SA-6TINTR

OMO.#: OMO-AS4C64M4SA-6TINTR

DRAM 256Mb 3.3V 166Mhz 64M x 4 SDRAM ITemp
AS4C64M4SA-6TIN

Mfr.#: AS4C64M4SA-6TIN

OMO.#: OMO-AS4C64M4SA-6TIN

DRAM 256Mb 3.3V 166Mhz 64M x 4 SDRAM ITemp
AS4C64M4SA-7TCN

Mfr.#: AS4C64M4SA-7TCN

OMO.#: OMO-AS4C64M4SA-7TCN

DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
AS4C64M4SA-7TIN

Mfr.#: AS4C64M4SA-7TIN

OMO.#: OMO-AS4C64M4SA-7TIN

DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM
AS4C64M4SA-6TIN

Mfr.#: AS4C64M4SA-6TIN

OMO.#: OMO-AS4C64M4SA-6TIN-ALLIANCE-MEMORY

IC DRAM 256M PARALLEL 54TSOP
可用性
库存:
Available
订购:
5000
输入数量:
AS4C64M4SA-7TCNTR的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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