SIS478DN-T1-GE3

SIS478DN-T1-GE3
Mfr. #:
SIS478DN-T1-GE3
制造商:
Vishay
描述:
IGBT Transistors MOSFET 30V 12A N-CH MOSFET
生命周期:
制造商新产品。
数据表:
SIS478DN-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
威世
产品分类
FET - 单
系列
SISxxxDN
打包
卷轴
部分别名
SIS478DN-GE3
安装方式
贴片/贴片
包装盒
PowerPAK-1212-8
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
15.6 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
+/- 25 V
Id 连续漏极电流
12 A
Vds-漏-源-击穿电压
30 V
VGS-th-Gate-Source-Threshold-Voltage
1.2 V to 2.5 V
Rds-On-Drain-Source-Resistance
16 mOhms
晶体管极性
N通道
Qg-门电荷
7 nC
正向跨导最小值
20 S
Tags
SIS478, SIS47, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 0.02 Ohm 3.6 nC SMT TrenchFET® Power Mosfet - PowerPAK 1212-8
***ical
Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 EP T/R
***ment14 APAC
MOSFET,N CH,DIODE,30V,12A,PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.4A; Power Dissipation Pd:3.2W; Voltage Vgs Max:25V
型号 制造商 描述 库存 价格
SIS478DN-T1-GE3
DISTI # V99:2348_09216429
Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.4A 8-Pin PowerPAK 1212 EP T/R
RoHS: Compliant
3000
  • 9000:$0.1799
  • 6000:$0.1844
  • 3000:$0.1950
  • 1000:$0.2162
  • 500:$0.2616
  • 100:$0.3002
  • 10:$0.3075
  • 1:$0.3417
SIS478DN-T1-GE3
DISTI # 31051593
Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.4A 8-Pin PowerPAK 1212 EP T/R
RoHS: Compliant
3000
  • 3000:$0.1950
  • 1000:$0.2162
  • 500:$0.2616
  • 100:$0.3002
  • 34:$0.3075
SIS478DN-T1-GE3
DISTI # SIS478DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.4A 8-Pin PowerPAK 1212 T/R (Alt: SIS478DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 15000
  • 3000:$2.4000
  • 6000:$1.6552
  • 9000:$1.2308
  • 15000:$1.0000
  • 30000:$0.9057
  • 75000:$0.8727
  • 150000:$0.8421
SIS478DN-T1-GE3
DISTI # SIS478DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin Power PAK (Alt: SIS478DN-T1-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€0.4679
  • 10:€0.3189
  • 25:€0.2749
  • 50:€0.2539
  • 100:€0.2439
  • 500:€0.2399
  • 1000:€0.2359
SIS478DN-T1-GE3
DISTI # 65T1674
Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET3000
  • 1:$0.2180
  • 3000:$0.2110
  • 6000:$0.2030
  • 12000:$0.1960
  • 18000:$0.1960
  • 30000:$0.1950
SIS478DN-T1-GE3
DISTI # 781-SIS478DN-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 25V Vgs PowerPAK 1212-8
RoHS: Compliant
2500
  • 1:$0.6000
  • 10:$0.4790
  • 100:$0.3640
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2180
  • 6000:$0.2030
  • 9000:$0.1960
  • 24000:$0.1950
图片 型号 描述
SIS478DN-T1-GE3

Mfr.#: SIS478DN-T1-GE3

OMO.#: OMO-SIS478DN-T1-GE3-VISHAY

IGBT Transistors MOSFET 30V 12A N-CH MOSFET
SIS478DN

Mfr.#: SIS478DN

OMO.#: OMO-SIS478DN-1190

全新原装
SIS478DN-T1-E3

Mfr.#: SIS478DN-T1-E3

OMO.#: OMO-SIS478DN-T1-E3-1190

全新原装
可用性
库存:
Available
订购:
3500
输入数量:
SIS478DN-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.27
US$0.27
10
US$0.25
US$2.52
100
US$0.24
US$23.90
500
US$0.23
US$112.85
1000
US$0.21
US$212.40
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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