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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SIHD7N60E-GE3 DISTI # V99:2348_09218416 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 3000 |
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| SIHD7N60E-GE3 DISTI # V36:1790_09218416 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 0 |
|
| SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 7A TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk | 1355In Stock |
|
| SIHD7N60E-GE3 DISTI # 27527136 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 3000 |
|
| SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin DPAK (Alt: SIHD7N60E-GE3) RoHS: Compliant Min Qty: 3000 | Europe - 2475 |
|
| SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 | |
| SIHD7N60E-GE3 DISTI # 63W4108 | Vishay Intertechnologies | Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes | 2593 |
|
| SIHD7N60E-GE3 DISTI # 78-SIHD7N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 1048 |
|
| SIHD7N60E-E3 DISTI # 78-SIHD7N60E-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 0 |
|
| SIHD7N60EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 3000 | |
| SIHD7N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | Americas - 3000 |
|
| SIHD7N60E-GE3 DISTI # 2283642 | Vishay Intertechnologies | MOSFET, N-CH, 600V, 7A, DPAK RoHS: Compliant | 2293 |
|
| SIHD7N60E-GE3 DISTI # XSKDRABV0041556 | Vishay Intertechnologies | RoHS: Compliant | 2400 in Stock0 on Order |
|
| SIHD7N60E-GE3 DISTI # 2283642 | Vishay Intertechnologies | MOSFET, N-CH, 600V, 7A, DPAK | 2304 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SIHD7N60ET1-GE3 OMO.#: OMO-SIHD7N60ET1-GE3 |
MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
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Mfr.#: SIHD7N60E-GE3 OMO.#: OMO-SIHD7N60E-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHD7N60ET-GE3 OMO.#: OMO-SIHD7N60ET-GE3 |
MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
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Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3-VISHAY |
RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
|
Mfr.#: SIHD7N60E-GE3-CUT TAPE |
全新原装 |
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Mfr.#: SIHD7N60E OMO.#: OMO-SIHD7N60E-1190 |
全新原装 |
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Mfr.#: SIHD7N60EGE3 OMO.#: OMO-SIHD7N60EGE3-1190 |
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
Mfr.#: SIHD7N60ET4-GE3 OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY |
MOSFET N-CH 600V 7A TO252AA |
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Mfr.#: SIHD7N60ET5-GE3 OMO.#: OMO-SIHD7N60ET5-GE3-VISHAY |
MOSFET N-CH 600V 7A TO252AA |