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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IRFW710BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1600 |
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| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: IRFW710B OMO.#: OMO-IRFW710B-1190 |
全新原装 |
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Mfr.#: IRFW710BTM OMO.#: OMO-IRFW710BTM-1190 |
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IRFW720B OMO.#: OMO-IRFW720B-1190 |
全新原装 |
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Mfr.#: IRFW730 OMO.#: OMO-IRFW730-1190 |
全新原装 |
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Mfr.#: IRFW730AT OMO.#: OMO-IRFW730AT-1190 |
全新原装 |
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Mfr.#: IRFW730ATU OMO.#: OMO-IRFW730ATU-1190 |
全新原装 |
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Mfr.#: IRFW730BTM OMO.#: OMO-IRFW730BTM-1190 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IRFW730BTMNL OMO.#: OMO-IRFW730BTMNL-1190 |
全新原装 |
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Mfr.#: IRFW740ATM OMO.#: OMO-IRFW740ATM-1190 |
全新原装 |
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Mfr.#: IRFW740TM OMO.#: OMO-IRFW740TM-1190 |
740TM |
