SI4431BDY-T1-E3

Mfr. #:: SI4431BDY-T1-E3
制造商:: Vishay
描述:: MOSFET P-CH 30V 5.7A 8-SOIC
生命周期:: 制造商新产品。
数据表:: SI4431BDY-T1-E3 数据表
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更多信息:: SI4431BDY-T1-E3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI4431BDY-E3

单位重量: 0.006596 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: 8-SOIC (0.154", 3.90mm Width)

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 8-SO

配置: 单身的

FET型: MOSFET P 沟道，金属氧化物

最大功率: 1.5W

晶体管型: 1 P-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: -

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 5.7A (Ta)

Rds-On-Max-Id-Vgs: 30 mOhm @ 7.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

栅极电荷-Qg-Vgs: 20nC @ 5V

钯功耗: 1.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 47 ns

上升时间: 10 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 5.7 A

Vds-漏-源-击穿电压: - 30 V

Rds-On-Drain-Source-Resistance: 30 mOhms

晶体管极性: P-通道

典型关断延迟时间: 70 ns

典型开启延迟时间: 10 ns

通道模式: 增强

Tags: SI4431BDY-T1-E, SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4431BDY-T1-E3 描述

***ied Electronics & Automation: SI4431BDY-T1-E3 P-channel MOSFET Transistor; 5.7 A; 30 V; 8-Pin SOIC

***ure Electronics: Single P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SOIC-8

***ment14 APAC: MOSFET, N, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.8A; Package / Case:8-SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V

***ark: P Channel Mosfet, 30V, -7.5A, Soic; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.5A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: No

SI4431BDY-T1-E3 更多信息

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI4431BDY-T1-E3 DISTI # V72:2272_07432075	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R RoHS: Compliant	446	250:$0.5199 100:$0.5215 25:$0.6279 10:$0.6307 1:$0.7215
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15700In Stock	1000:$0.4331 500:$0.5414 100:$0.7308 10:$0.9470 1:$1.0800
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15700In Stock	1000:$0.4331 500:$0.5414 100:$0.7308 10:$0.9470 1:$1.0800
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	15000In Stock	2500:$0.3810
SI4431BDY-T1-E3 DISTI # 30345654	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R RoHS: Compliant	446	250:$0.5199 100:$0.5215 25:$0.6279 24:$0.6307
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 5000	2500:$0.3259 5000:$0.3169 10000:$0.3039 15000:$0.2949 25000:$0.2869
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5799 5000:€0.3949 10000:€0.3399 15000:€0.3139 25000:€0.2919
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4431BDY-T1-E3 DISTI # 06J7725	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7725) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.2400 10:$1.0100 25:$0.9320 50:$0.8530 100:$0.7750 250:$0.7210 500:$0.6670
SI4431BDY-T1-E3 DISTI # 06J7725	Vishay Intertechnologies	P CHANNEL MOSFET, 30V, -7.5A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes	388	1:$1.2400 10:$1.0100 25:$0.9320 50:$0.8530 100:$0.7750 250:$0.7210 500:$0.6670
SI4431BDY-T1-E3. DISTI # 26AC3330	Vishay Intertechnologies	FOR NEW DESIGNS USE SI4431CDY-T1-GE3 , ROHS COMPLIANT: NO	5000	1:$0.4100 2500:$0.4030 5000:$0.3950 10000:$0.3900 15000:$0.3890
SI4431BDY-T1-E3 DISTI # 70026219	Vishay Siliconix	SI4431BDY-T1-E3 P-channel MOSFET Transistor,5.7 A,30 V,8-Pin SOIC RoHS: Compliant	0	2500:$0.5000 5000:$0.4800 12500:$0.4700 25000:$0.4500 62500:$0.4300
SI4431BDY-T1-E3 DISTI # 781-SI4431BDY-E3	Vishay Intertechnologies	MOSFET 30V (D-S) 7.5A RoHS: Compliant	1653	1:$1.0300 10:$0.8420 100:$0.6460 500:$0.5560 1000:$0.4390 2500:$0.4100 5000:$0.3890
SI4431BDY-T1 DISTI # 781-SI4431BDY	Vishay Intertechnologies	MOSFET 30V 7.5A 1.5W RoHS: Not compliant	0
SI4431BDY-T1-E3	Vishay Intertechnologies	Single P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	15000Reel	2500:$0.4800
SI4431BDY-T1-E3	Vishay Intertechnologies		1996
SI4431BDY-T1-E3	Vishay Siliconix		1105
SI4431BDY-T1-E3	Vishay Intertechnologies		863
SI4431BDY-T1-E3	VISHAY SILCONEX	MOSFET Transistor, P-Channel, SO	14	6:$0.8652 1:$1.0815
SI4431BDY-T1-E3	Vishay Intertechnologies	MOSFET Transistor, P-Channel, SO	501	212:$0.7600 54:$0.9500 1:$1.9000
SI4431BDY-T1-E3	Unknown	MOSFET Transistor, P-Channel, SO	1211	1001:$0.7000 201:$0.8000 1:$2.0000
SI4431BDY-T1-E3	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	39	13:$1.2273 3:$1.6364 1:$2.0455
SI4431BDY-T1-E3		INSTOCK	12359
SI4431BDY-T1-E3	Vishay Intertechnologies	INSTOCK	18165
SI4431BDY-T1-E3	Vishay Intertechnologies	INSTOCK	1620
SI4431BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V (D-S) 7.5A RoHS: Compliant	Americas - 20000
SI4431BDY-T1-E3 DISTI # C1S803600845006	Vishay Intertechnologies	MOSFETs RoHS: Compliant	446	250:$0.5178 100:$0.5195 25:$0.6246 10:$0.6274
SI4431BDY-T1-E3 DISTI # 1612646	Vishay Intertechnologies	MOSFET, P, 8-SOIC RoHS: Compliant	0	1:$1.6300 10:$1.3400 100:$1.0300 500:$0.8800 1000:$0.6960 2500:$0.6490 5000:$0.6160
SI4431BDY-T1-E3 DISTI # XSFP00000090668	Vishay Siliconix	RoHS: Compliant	35333	2500:$0.9600 35333:$0.8727

图片	型号	描述
	Mfr.#: SI4431BDY-T1-GE3 OMO.#: OMO-SI4431BDY-T1-GE3	MOSFET 30V 7.5A 2.5W 30mohm @ 10V
	Mfr.#: SI4431BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4431BDY-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI4431B OMO.#: OMO-SI4431B-1190	全新原装
	Mfr.#: SI4431BDY OMO.#: OMO-SI4431BDY-1190	MOSFET Transistor, P-Channel, SO
	Mfr.#: SI4431BDY-T1-E3 OMO.#: OMO-SI4431BDY-T1-E3-VISHAY	MOSFET P-CH 30V 5.7A 8-SOIC
	Mfr.#: SI4431BDY-T1-E3 GE3 OMO.#: OMO-SI4431BDY-T1-E3-GE3-1190	全新原装
	Mfr.#: SI4431BDY-T1-E3-S OMO.#: OMO-SI4431BDY-T1-E3-S-1190	全新原装
	Mfr.#: SI4431BDY-T1-E3CT OMO.#: OMO-SI4431BDY-T1-E3CT-1190	全新原装
	Mfr.#: SI4431BDY-T1-GE3 OMO.#: OMO-SI4431BDY-T1-GE3-VISHAY	MOSFET P-CH 30V 5.7A 8SOIC
	Mfr.#: SI4431BDYT1E3 OMO.#: OMO-SI4431BDYT1E3-1190	全新原装

SI4431BDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes