SI3430DV-T1-E3

Mfr. #:: SI3430DV-T1-E3
制造商:: Vishay
描述:: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
生命周期:: 制造商新产品。
数据表:: SI3430DV-T1-E3 数据表
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更多信息:: SI3430DV-T1-E3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: -

打包: Digi-ReelR 替代包装

部分别名: SI3430DV-E3

单位重量: 0.000705 oz

安装方式: 贴片/贴片

包装盒: SOT-23-6 Thin, TSOT-23-6

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 6-TSOP

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 1.14W

晶体管型: 1 N-Channel

漏源电压 Vdss: 100V

输入电容-Ciss-Vds: -

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 1.8A (Ta)

Rds-On-Max-Id-Vgs: 170 mOhm @ 2.4A, 10V

Vgs-th-Max-Id: 2V @ 250μA (Min)

栅极电荷-Qg-Vgs: 6.6nC @ 10V

钯功耗: 1.14 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 11 ns

上升时间: 11 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 2.4 A

Vds-漏-源-击穿电压: 100 V

Rds-On-Drain-Source-Resistance: 170 mOhms

晶体管极性: N通道

典型关断延迟时间: 16 ns

典型开启延迟时间: 9 ns

通道模式: 增强

Tags: SI3430, SI343, SI34, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3430DV-T1-E3 描述

***ure Electronics: Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6

***et Europe: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

***Components: MOSFET N-Channel 100V 1.8A TSOP6

***i-Key: MOSFET N-CH 100V 1.8A 6-TSOP

***ronik: N-CHANNEL-FET 2,4A 100V TSOP-6 RoHSconf

***ser: N-Channel MOSFETs 100V 8A 2W

***ponent Sense: MOSFET 100V 8A 2W

***ied Electronics & Automation: TRANSITOR, SI2323DS

***: 100V, 170 MOHMS@10V

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.14W; No. Of Pins:6Pins Rohs Compliant: No

SI3430DV-T1-E3 更多信息

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI3430DV-T1-E3 DISTI # V72:2272_07433160	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R RoHS: Compliant	49	25:$0.8309 10:$0.8590 1:$0.9585
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4500
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3430DV-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 61	1:$0.8579 30:$0.8069 75:$0.8049 150:$0.7699 375:$0.6689 750:$0.5459 1500:$0.5439
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5239 6000:$0.5079 12000:$0.4869 18000:$0.4739 30000:$0.4609
SI3430DV-T1-E3 DISTI # 06J7594	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W , RoHS Compliant: Yes	0	1:$1.2100 10:$1.0700 25:$0.9980 50:$0.9230 100:$0.8480 500:$0.6570 1000:$0.5190
SI3430DV-T1-E3 DISTI # 65K1923	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):185mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	0	1:$0.4700 3000:$0.4700
SI3430DV-T1-E3. DISTI # 15AC0293	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W,No. of Pins:6Pins , RoHS Compliant: No	0	1:$0.4700 3000:$0.4700
SI3430DV-T1-E3 DISTI # 781-SI3430DV-E3	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	360	1:$1.2600 10:$1.0400 100:$0.7940 500:$0.6820 1000:$0.6000 3000:$0.5990
SI3430DV-T1 DISTI # 781-SI3430DV	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Not compliant	0
SI3430DV-T1-E3	Vishay Intertechnologies	1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	16	5:$1.0820 1:$1.3525
SI3430DV-T1-E3	Vishay Intertechnologies	1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	292	81:$0.4500 18:$0.7500 1:$1.5000
SI3430DV-T1-E3	Vishay BLH		365	5:$1.1250 19:$0.7313 70:$0.4219 239:$0.3600
SI3430DV-T1-E3.	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	Americas - 530	10:$0.7040
SI3430DV-T1-E3	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	Americas - Stock
SI3430DV-T1-E3 DISTI # C1S803600844371	Vishay Intertechnologies	MOSFETs RoHS: Compliant	49	25:$0.8309 10:$0.8590

图片	型号	描述
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3	MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3	MOSFET 100V, 170 MOHMS@10V
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3-VISHAY	IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV OMO.#: OMO-SI3430DV-1190	全新原装
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3-VISHAY	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

SI3430DV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes