SI4100DY-T1-GE3

Mfr. #:: SI4100DY-T1-GE3
制造商:: Vishay
描述:: MOSFET N-CH 100V 6.8A 8-SOIC
生命周期:: 制造商新产品。
数据表:: SI4100DY-T1-GE3 数据表
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产品属性
属性值

制造商

产品分类: FET - 单

打包: 卷轴

部分别名: SI4100DY-GE3

单位重量: 0.006596 oz

安装方式: 贴片/贴片

包装盒: SOIC-Narrow-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 2.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 10 ns

上升时间: 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 4.4 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 4.5 V

Rds-On-Drain-Source-Resistance: 63 mOhms

晶体管极性: N通道

典型关断延迟时间: 12 ns 15 ns

典型开启延迟时间: 15 ns 10 ns

Qg-门电荷: 13.5 nC

通道模式: 增强

Tags: SI4100DY-T1, SI4100DY-T, SI4100DY, SI4100D, SI4100, Si410, SI41, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4100DY-T1-GE3 描述

***ied Electronics & Automation: SI4100DY-T1-GE3 N-channel MOSFET Transistor; 6.8 A; 100 V; 8-Pin SOIC

***et: Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R

***ure Electronics: Si4100DY Series 100 V 6.8 A 63 mOhm Surface Mount N-Channel MOSFET - SO-8

***nell: MOSFET, N-CH, 100V, 6.8A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.8A; Power Dissipation Pd:6W; Voltage Vgs Max:20V

Market price

型号	制造商	描述	库存	价格
SI4100DY-T1-GE3 DISTI # V72:2272_09216442	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R RoHS: Compliant	7330	6000:$0.5445 3000:$0.5502 1000:$0.5566 500:$0.6236 250:$0.7096 100:$0.7174 25:$0.8901 10:$0.9008 1:$1.0457
SI4100DY-T1-GE3 DISTI # SI4100DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 6.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2220In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI4100DY-T1-GE3 DISTI # SI4100DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 6.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2220In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI4100DY-T1-GE3 DISTI # SI4100DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 6.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.5852
SI4100DY-T1-GE3 DISTI # 26723074	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R RoHS: Compliant	7330	6000:$0.5445 3000:$0.5502 1000:$0.5566 500:$0.6236 250:$0.7096 100:$0.7174 25:$0.8901 14:$0.9008
SI4100DY-T1-GE3 DISTI # SI4100DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R (Alt: SI4100DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.6829 5000:€0.4659 10000:€0.4009 15000:€0.3699 25000:€0.3439
SI4100DY-T1-GE3 DISTI # SI4100DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4100DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5409 5000:$0.5249 10000:$0.5039 15000:$0.4899 25000:$0.4769
SI4100DY-T1-GE3 DISTI # SI4100DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R (Alt: SI4100DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4100DY-T1-GE3 DISTI # 15R4959	Vishay Intertechnologies	MOSFET Transistor, N Channel, 6.8 A, 100 V, 51 mohm, 10 V, 2 V	0	1:$0.6310 2500:$0.6010 5000:$0.5630 7500:$0.5320
SI4100DY-T1-GE3 DISTI # 55R1914	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 6.8A, SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.051ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	4565	1:$1.3300 10:$1.1000 25:$1.0100 50:$0.9270 100:$0.8400 250:$0.7820 500:$0.7230
SI4100DY-T1-GE3 DISTI # 70616169	Vishay Siliconix	SI4100DY-T1-GE3 N-channel MOSFET Transistor,6.8 A,100 V,8-Pin SOIC RoHS: Compliant	0	100:$0.6700 200:$0.6570 500:$0.6370 1000:$0.6100 2500:$0.5700
SI4100DY-T1-GE3 DISTI # 781-SI4100DY-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SO-8 RoHS: Compliant	1251	1:$1.3300 10:$1.1000 100:$0.8400 500:$0.7230 1000:$0.6350 2500:$0.6340
SI4100DY-T1-GE3 DISTI # SI4100DY-GE3	Vishay Intertechnologies	N-Ch 100V 6,8A 2,5W 0,063R SO8 RoHS: Not Compliant	2200	50:€0.4120 100:€0.3520 500:€0.3220 2500:€0.3115
SI4100DY-T1-GE3 DISTI # 1779251	Vishay Intertechnologies	MOSFET, N-CH, 100V, 6.8A, SO8 RoHS: Compliant	4565	1:$2.1000 10:$1.7500 100:$1.3400 500:$1.1500 1000:$1.0100 2500:$1.0100
SI4100DY-T1-GE3 DISTI # 1779251RL	Vishay Intertechnologies	MOSFET, N-CH, 100V, 6.8A, SO8 RoHS: Compliant	0	1:$2.1000 10:$1.7500 100:$1.3400 500:$1.1500 1000:$1.0100 2500:$1.0100
SI4100DY-T1-GE3 DISTI # C1S803605110808	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R RoHS: Not Compliant	7330	250:$0.7096 100:$0.7174 25:$0.8901 10:$0.9008
SI4100DY-T1-GE3 DISTI # XSFP00000138693	Vishay Siliconix	RoHS: Compliant	30285	2500:$1.0000 30285:$0.9091
SI4100DY-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SO-8 RoHS: Compliant	Americas -
SI4100DY-T1-GE3 DISTI # 1779251	Vishay Intertechnologies	MOSFET, N-CH, 100V, 6.8A, SO8 RoHS: Compliant	4565	5:£1.0300 25:£0.8870 100:£0.6770 250:£0.6310 500:£0.5830

图片	型号	描述
	Mfr.#: SI4100DY-T1-E3 OMO.#: OMO-SI4100DY-T1-E3	MOSFET 100V Vds 20V Vgs SO-8
	Mfr.#: SI4100DY-T1-GE3 OMO.#: OMO-SI4100DY-T1-GE3	MOSFET 100V Vds 20V Vgs SO-8
	Mfr.#: SI4100D OMO.#: OMO-SI4100D-1190	全新原装
	Mfr.#: SI4100DY OMO.#: OMO-SI4100DY-1190	全新原装
	Mfr.#: SI4100DY-T1 OMO.#: OMO-SI4100DY-T1-1190	全新原装
	Mfr.#: SI4100DY-T1-E3 OMO.#: OMO-SI4100DY-T1-E3-VISHAY	MOSFET N-CH 100V 6.8A 8-SOIC
	Mfr.#: SI4100DY-T1-GE3 OMO.#: OMO-SI4100DY-T1-GE3-VISHAY	MOSFET N-CH 100V 6.8A 8-SOIC
	Mfr.#: SI4100DY-TI-GE3 OMO.#: OMO-SI4100DY-TI-GE3-1190	全新原装
	Mfr.#: SI4100DY-T1-E3-CUT TAPE OMO.#: OMO-SI4100DY-T1-E3-CUT-TAPE-1190	全新原装

SI4100DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes