STGW40NC60KD

STGW40NC60KD
Mfr. #:
STGW40NC60KD
制造商:
STMicroelectronics
描述:
IGBT Transistors 40A - 600V Short circuit rugged IGBT
生命周期:
制造商新产品。
数据表:
STGW40NC60KD 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGW40NC60KD 更多信息 STGW40NC60KD Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
600 V
最大栅极发射极电压:
20 V
Pd - 功耗:
250 W
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
STGW40NC60KD
打包:
管子
连续集电极电流 Ic 最大值:
70 A
高度:
20.15 mm
长度:
15.75 mm
宽度:
5.15 mm
品牌:
意法半导体
产品类别:
IGBT晶体管
出厂包装数量:
600
子类别:
IGBT
单位重量:
1.340411 oz
Tags
STGW40NC, STGW40N, STGW40, STGW4, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Trade Switching Low On State Through hole IGBT - TO-247-3
***icroelectronics
40 A - 600 V - short circuit rugged IGBT
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
***et
STMICROELECTRONICS STGW40NC60KD IGBTS
***ure Electronics
Very Fast 600 V 80 A 250 W Flange Mount PowerMESH IGBT - TO-247LL
***ical
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
PMIC Solutions Power Management IC, i.MX6, no-prog ,4/6 buck, 6 LDO, 1 boost, QFN 56, Reel
***icroelectronics
40 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
***p One Stop
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
IRG4PC50FPBF, IGBT Transistor, 70 A 600V, 3-Pin TO-247AC
***ure Electronics
IRG4PC50 Series 600 V 39 A N-Channel Fast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.6 V Current release time: 230 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time Max:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:280A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.85 V Current release time: 8 ns Power dissipation: 308 W
***ment14 APAC
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PC50SPBF Series 600 V 41 A N-Channel Standard Speed IGBT - TO-247AC
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***el Electronic
In a Tube of 25, Infineon IRG4PC50SPBF IGBT, 70 A 600 V, 3-Pin TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.36 V Current release time: 620 ns Power dissipation: 200 W
***nell
IGBT, 600V, 70A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:1.36V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:140A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:600ns; Time, Rise:30ns; Transistors, No. of:1
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
New short circuit rugged "K" series
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Channel 30A 600V TO-247
***ark
Igbt, Single, 600V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
型号 制造商 描述 库存 价格
STGW40NC60KD
DISTI # V79:2366_17781904
STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
200
  • 5000:$2.0410
  • 2500:$2.1000
  • 1000:$2.1740
  • 500:$2.5990
  • 250:$2.8600
  • 100:$3.0440
  • 10:$3.5430
  • 1:$4.6144
STGW40NC60KD
DISTI # V36:1790_06560768
STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW40NC60KD
    DISTI # 497-8441-5-ND
    STMicroelectronicsIGBT 600V 70A 250W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    1226In Stock
    • 2520:$2.2344
    • 510:$2.7818
    • 120:$3.2678
    • 30:$3.7707
    • 10:$3.9880
    • 1:$4.4400
    STGW40NC60KD
    DISTI # 26113382
    STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    200
    • 5000:$2.0410
    • 2500:$2.1000
    • 1000:$2.1740
    • 500:$2.5990
    • 250:$2.8600
    • 100:$3.0440
    • 10:$3.5430
    • 4:$4.1950
    STGW40NC60KD
    DISTI # STGW40NC60KD
    STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW40NC60KD)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€1.7900
    • 100:€1.9900
    • 500:€1.9900
    • 50:€2.0900
    • 25:€2.1900
    • 10:€2.2900
    • 1:€2.4900
    STGW40NC60KD
    DISTI # STGW40NC60KD
    STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW40NC60KD)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 3600:$1.9900
    • 6000:$1.9900
    • 2400:$2.0900
    • 1200:$2.1900
    • 600:$2.2900
    STGW40NC60KD
    DISTI # 09R5998
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$2.0800
    • 250:$2.1400
    • 100:$2.5600
    • 50:$2.9600
    • 25:$3.1500
    • 10:$3.6000
    • 1:$4.1500
    STGW40NC60KD
    DISTI # 511-STGW40NC60KD
    STMicroelectronicsIGBT Transistors 40A - 600V Short circuit rugged IGBT
    RoHS: Compliant
    226
    • 1:$4.2300
    • 10:$3.6000
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    • 1000:$2.2400
    • 2500:$2.1300
    STGW40NC60KDSTMicroelectronics 300
      STGW40NC60KDSTMicroelectronicsInsulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant
      Europe - 285
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        可用性
        库存:
        826
        订购:
        2809
        输入数量:
        STGW40NC60KD的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
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        1
        US$4.23
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        10
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        US$36.00
        100
        US$3.12
        US$312.00
        250
        US$2.96
        US$740.00
        500
        US$2.65
        US$1 325.00
        1000
        US$2.24
        US$2 240.00
        2500
        US$2.13
        US$5 325.00
        5000
        US$2.05
        US$10 250.00
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