IPB034N06L3 G

Mfr. #:: IPB034N06L3 G
制造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
生命周期:: 制造商新产品。
数据表:: IPB034N06L3 G 数据表
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产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: OptiMOS 3

打包: 卷轴

部分别名: IPB034N06L3GATMA1 IPB034N06L3GXT SP000398062

单位重量: 0.068654 oz

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TO-263-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 167 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 13 ns

上升时间: 78 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 90 A

Vds-漏-源-击穿电压: 60 V

Rds-On-Drain-Source-Resistance: 3.4 mOhms

晶体管极性: N通道

典型关断延迟时间: 64 ns

典型开启延迟时间: 25 ns

通道模式: 增强

Tags: IPB034N06L3G, IPB034N06L, IPB034N06, IPB034, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB034N06L3 G 更多信息

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型号	制造商	描述	库存	价格
IPB034N06L3GATMA1 DISTI # IPB034N06L3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$0.8174
IPB034N06L3GATMA1 DISTI # IPB034N06L3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$1.0162 100:$1.3065 10:$1.6260 1:$1.8000
IPB034N06L3GATMA1 DISTI # IPB034N06L3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$1.0162 100:$1.3065 10:$1.6260 1:$1.8000
IPB034N06L3 G DISTI # SP000398062	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000398062) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.0129 2000:€0.8499 4000:€0.7099 6000:€0.6179 10000:€0.5789
IPB034N06L3GXT DISTI # IPB034N06L3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.5899 2000:$0.5689 4000:$0.5479 6000:$0.5299 10000:$0.5199
IPB034N06L3GATMA1 DISTI # SP000398062	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000398062) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€0.8499 2000:€0.6949 4000:€0.6369 6000:€0.5879 10000:€0.5459
IPB034N06L3GATMA1 DISTI # 50Y2003	Infineon Technologies AG	MOSFET, N-CH, 60V, 90A, 175DEG C, 167W,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	0	1:$1.5100 10:$1.2900 25:$1.2000 50:$1.1200 100:$1.0300 250:$0.9640 500:$0.8970
IPB034N06L3 G DISTI # 726-IPB034N06L3G	Infineon Technologies AG	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant	13	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970 1000:$0.7440
IPB034N06L3GATMA1 DISTI # 726-IPB034N06L3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant	60	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970 1000:$0.7440
IPB034N06L3G	Infineon Technologies AG	INSTOCK	770
IPB034N06L3G	Infineon Technologies AG	60V,3.4m,90A,N-Channel Power MOSFET	500	1:$1.1900 100:$0.9900 500:$0.8700 1000:$0.8500
IPB034N06L3GATMA1 DISTI # 2480798	Infineon Technologies AG	MOSFET, N-CH, 60V, 90A, TO-263-3 RoHS: Compliant	6	1:$2.4000 10:$2.0400 100:$1.6300 500:$1.4200 1000:$1.1800
IPB034N06L3GATMA1 DISTI # 2480798RL	Infineon Technologies AG	MOSFET, N-CH, 60V, 90A, TO-263-3 RoHS: Compliant	0	1:$2.4000 10:$2.0400 100:$1.6300 500:$1.4200 1000:$1.1800
IPB034N06L3GATMA1 DISTI # 2480798	Infineon Technologies AG	MOSFET, N-CH, 60V, 90A, TO-263-3 RoHS: Compliant	11	5:£1.0400 25:£0.9210 100:£0.7880 250:£0.7550 500:£0.6850

图片	型号	描述
	Mfr.#: IPB034N03L G OMO.#: OMO-IPB034N03L-G	MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N06L3 G OMO.#: OMO-IPB034N06L3-G	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N06L3GXT OMO.#: OMO-IPB034N06L3GXT-1190	Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1)
	Mfr.#: IPB034N03LGXT OMO.#: OMO-IPB034N03LGXT-1190	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1)
	Mfr.#: IPB034N03L OMO.#: OMO-IPB034N03L-1190	全新原装
	Mfr.#: IPB034N06L3 OMO.#: OMO-IPB034N06L3-1190	全新原装
	Mfr.#: IPB034N06L3G OMO.#: OMO-IPB034N06L3G-1190	60V,3.4m��,90A,N-Channel Power MOSFET
	Mfr.#: IPB034N06N3 OMO.#: OMO-IPB034N06N3-1190	全新原装
	Mfr.#: IPB034N06N3GATMA1 OMO.#: OMO-IPB034N06N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 100A TO263-7
	Mfr.#: IPB034N06N3 G OMO.#: OMO-IPB034N06N3-G-126	IGBT Transistors MOSFET N-Ch 60V 100A D2PAK-6

IPB034N06L3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes