SPD02N80C3ATMA1

SPD02N80C3ATMA1
Mfr. #:
SPD02N80C3ATMA1
制造商:
Infineon Technologies
描述:
MOSFET LOW POWER_LEGACY
生命周期:
制造商新产品。
数据表:
SPD02N80C3ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SPD02N80C3ATMA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
PG-TO-252-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
800 V
Id - 连续漏极电流:
2 A
Rds On - 漏源电阻:
2.7 Ohms
Vgs th - 栅源阈值电压:
2.1 V
Vgs - 栅源电压:
10 V
Qg - 门电荷:
12 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
42 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
卷轴
高度:
2.3 mm
长度:
6.5 mm
系列:
CoolMOS C3
晶体管类型:
1 N-Channel
宽度:
6.22 mm
品牌:
英飞凌科技
秋季时间:
18 ns
产品类别:
MOSFET
上升时间:
15 ns
出厂包装数量:
2500
子类别:
MOSFET
典型关断延迟时间:
72 ns
典型的开启延迟时间:
25 ns
第 # 部分别名:
SP001117754 SPD02N80C3
单位重量:
0.139332 oz
Tags
SPD02N80C, SPD02N8, SPD02N, SPD02, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS™ Power Mosfet - PG-TO252-3
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
SPD02N80C3ATMA1
DISTI # V72:2272_06384511
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
200
  • 100:$0.7028
  • 25:$0.8210
  • 10:$1.0034
  • 1:$1.1660
SPD02N80C3ATMA1
DISTI # V36:1790_06384511
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.3821
  • 1250000:$0.3824
  • 250000:$0.4111
  • 25000:$0.4631
  • 2500:$0.4719
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2336In Stock
  • 1000:$0.5321
  • 500:$0.6740
  • 100:$0.8159
  • 10:$1.0460
  • 1:$1.1700
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2336In Stock
  • 1000:$0.5321
  • 500:$0.6740
  • 100:$0.8159
  • 10:$1.0460
  • 1:$1.1700
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 12500:$0.4408
  • 5000:$0.4581
  • 2500:$0.4822
SPD02N80C3ATMA1
DISTI # 33925009
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 25000:$0.4171
  • 15000:$0.4197
  • 10000:$0.4345
  • 5000:$0.4504
  • 2500:$0.4672
SPD02N80C3ATMA1
DISTI # 32336490
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
200
  • 100:$0.7028
  • 25:$0.8210
  • 14:$1.0034
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD02N80C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.4168
  • 15000:$0.4243
  • 10000:$0.4391
  • 5000:$0.4556
  • 2500:$0.4726
SPD02N80C3ATMA1
DISTI # SP001117754
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R (Alt: SP001117754)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.4149
  • 15000:€0.4469
  • 10000:€0.4839
  • 5000:€0.5279
  • 2500:€0.6459
SPD02N80C3ATMA1
DISTI # 33P8203
Infineon Technologies AGMOSFET, N CHANNEL, 800V, 2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1000:$0.4970
  • 500:$0.6300
  • 250:$0.6720
  • 100:$0.7130
  • 50:$0.7850
  • 25:$0.8560
  • 10:$0.9280
  • 1:$1.0800
SPD02N80C3ATMA1.
DISTI # 15AC0583
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:42W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 25000:$0.4170
  • 15000:$0.4250
  • 10000:$0.4390
  • 5000:$0.4560
  • 1:$0.4730
SPD02N80C3ATMA1
DISTI # 726-SPD02N80C3ATMA1
Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant
45955
  • 1:$1.0700
  • 10:$0.9190
  • 100:$0.7060
  • 500:$0.6240
  • 1000:$0.4920
SPD02N80C3ATMA1Infineon Technologies AGSingle N-Channel 800 V 2.7 mOhm 16 nC CoolMOS Power Mosfet - PG-TO252-3
RoHS: Not Compliant
100Cut Tape/Mini-Reel
  • 1:$0.6150
  • 50:$0.5300
  • 100:$0.5200
  • 250:$0.5000
  • 500:$0.4900
SPD02N80C3ATMA1
DISTI # 1664105
Infineon Technologies AGMOSFET, N, TO-252229
  • 500:£0.4810
  • 250:£0.5130
  • 100:£0.5440
  • 10:£0.7660
  • 1:£0.9410
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OMO.#: OMO-LMC6082AIM-NOPB

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Mfr.#: SMAJ440CA

OMO.#: OMO-SMAJ440CA

TVS Diodes / ESD Suppressors 440volts 1uA .6 Amps Bi-Dir
MB6S-TP

Mfr.#: MB6S-TP

OMO.#: OMO-MB6S-TP

Bridge Rectifiers 100Vr 70Vrms 100V 35A 1.0V 13pF
STTH1L06A

Mfr.#: STTH1L06A

OMO.#: OMO-STTH1L06A

Rectifiers 1.0 Amp 600 Volt
STTH1R06A

Mfr.#: STTH1R06A

OMO.#: OMO-STTH1R06A

Rectifiers RECTIFIER
FDD8896

Mfr.#: FDD8896

OMO.#: OMO-FDD8896

MOSFET 30V N-Channel PowerTrench
STPS3150U

Mfr.#: STPS3150U

OMO.#: OMO-STPS3150U

Schottky Diodes & Rectifiers 3.0 Amp 150 Volt
RC1206FR-0710ML

Mfr.#: RC1206FR-0710ML

OMO.#: OMO-RC1206FR-0710ML

Thick Film Resistors - SMD 10M OHM 1%
LM2903EDR2G

Mfr.#: LM2903EDR2G

OMO.#: OMO-LM2903EDR2G-ON-SEMICONDUCTOR

IC COMP DUAL PRECISION 8SOIC
可用性
库存:
34
订购:
2017
输入数量:
SPD02N80C3ATMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.07
US$1.07
10
US$0.92
US$9.19
100
US$0.71
US$70.60
500
US$0.62
US$312.00
1000
US$0.49
US$492.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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