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S29GL01GS10DHSS30

S29GL01GS10DHSS30
Mfr. #:
S29GL01GS10DHSS30
制造商:
Cypress Semiconductor
描述:
NOR Flash Nor
生命周期:
制造商新产品。
数据表:
S29GL01GS10DHSS30 数据表
交货:
DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:
S29GL01GS10DHSS30 更多信息 S29GL01GS10DHSS30 Product Details
产品属性
属性值
制造商：
赛普拉斯半导体
产品分类：
NOR闪存
RoHS：
Y
安装方式：
贴片/贴片
包装/案例：
FBGA-64
系列：
S29GL01G/512/256/128S
内存大小：
1 Gbit
接口类型：
平行线
组织：
128 M x 8
计时类型：
异步
数据总线宽度：
8 bit
电源电压 - 最小值：
2.7 V
电源电压 - 最大值：
3.6 V
电源电流 - 最大值：
100 mA
打包：
托盘
内存类型：
也不
速度：
100 ns
建筑学：
MirrorBit Eclipse
品牌：
赛普拉斯半导体
湿气敏感：
是的
产品类别：
NOR闪存
标准：
通用闪存接口 (CFI)
出厂包装数量：
260
子类别：
内存和数据存储
商品名：
MirrorBit Eclipse
Tags
S29GL01GS10DHS, S29GL01GS10D, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
1G BIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE SECURE FLASH MEMO
***i-Key
IC FLASH 1GBIT PARALLEL 64FBGA
***NGYU ELECTRONICS
IC FLASH 1G PARALLEL 64BGA
***ress Semiconductor SCT
Parallel NOR Flash Memory, 128 Mbit Density, 90 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL128P Series 128 Mb (16M x 8) 3 V 90 ns Flash-NOR Memory - BGA-64
***et
NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 90ns 64-Pin Fortified BGA Tray
***ark
IC, FLASH MEM, 128MBIT, 90NS, 64-BGA; Memory Type:Flash - NOR; Memory Size:128Mbit; Memory Configuration:-; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:90ns; MSL:- ;RoHS Compliant: Yes
***ical
NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 128 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL128P Series 128 Mb (16M x 8) 3 V 100 ns Flash-NOR Memory - BGA-64
***-Wing Technology
Asynchronous Active Copper Silver Tin 2012 FLASH Memory -40C~85C TA 2.7V 128Mb 110mA
***ment14 APAC
IC, MEMORY, FLASH, 128M, 3V, 64FBGA; Memory Type:Flash - NOR; Memory Size:128MB; Memory Configuration:16M x 8, 8M x 16; Interface Type:CFI; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:FBGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; Access Time:100ns; Interface:Parallel; Memory Configuration:8M x 16b; Memory Type:Flash
***ical
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL256P Series 256 Mb (32M x 8) 3 V 100 ns Flash-NOR Memory - BGA-64
***nell
MEMORY, FLASH, 256MBIT, 64FBGA; Memory Type:Flash; Memory Size:256Mbit; Memory Configuration:(Not Applicable); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:100ns; IC Interface Type:(Not Applicable); Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
型号 制造商 描述 库存 价格
S29GL01GS10DHSS30
DISTI # S29GL01GS10DHSS30-ND		Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 260
Container: Tray		Temporarily Out of Stock
  • 260:$8.4500
S29GL01GS10DHSS30
DISTI # 727-S29GL01GS10DHSS3		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 260:$9.1400
  • 520:$8.5500
图片 型号 描述
S29GL01GT10DHI010

Mfr.#: S29GL01GT10DHI010

OMO.#: OMO-S29GL01GT10DHI010

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S29GL01GS11DHI020

Mfr.#: S29GL01GS11DHI020

OMO.#: OMO-S29GL01GS11DHI020

 NOR Flash 1G 3V 100ns Parallel NOR Flash
S29GL01GS11TFI020

Mfr.#: S29GL01GS11TFI020

OMO.#: OMO-S29GL01GS11TFI020

 NOR Flash 1G 3V 110ns Parallel NOR Flash
S29GL01GS10DHI023

Mfr.#: S29GL01GS10DHI023

OMO.#: OMO-S29GL01GS10DHI023

 NOR Flash Nor
S29GL01GS10DHSS33

Mfr.#: S29GL01GS10DHSS33

OMO.#: OMO-S29GL01GS10DHSS33

 NOR Flash Nor
S29GL01GT13DHNV13

Mfr.#: S29GL01GT13DHNV13

OMO.#: OMO-S29GL01GT13DHNV13

 NOR Flash Nor
S29GL01GT10FAI013

Mfr.#: S29GL01GT10FAI013

OMO.#: OMO-S29GL01GT10FAI013

 NOR Flash Nor
S29GL01GP12TFI010

Mfr.#: S29GL01GP12TFI010

OMO.#: OMO-S29GL01GP12TFI010

 NOR Flash 1Gb 3V 120ns Parallel NOR Flash
S29GL01GS10FAI010

Mfr.#: S29GL01GS10FAI010

OMO.#: OMO-S29GL01GS10FAI010-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GP13FFIV20

Mfr.#: S29GL01GP13FFIV20

OMO.#: OMO-S29GL01GP13FFIV20-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL 64FBGA GL-P
可用性
库存:
Available
订购:
5500
输入数量:
S29GL01GS10DHSS30的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
260
US$9.14
US$2 376.40
520
US$8.55
US$4 446.00
1040
US$7.85
US$8 164.00
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