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FCU5N60TU

FCU5N60TU
Mfr. #:
FCU5N60TU
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel MOSFET
生命周期:
制造商新产品。
数据表:
FCU5N60TU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
E
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
4.6 A
Rds On - 漏源电阻：
810 mOhms
Vgs - 栅源电压：
30 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
54 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
16.3 mm
长度：
10.67 mm
系列：
FCU5N60
晶体管类型：
1 N-Channel
宽度：
4.7 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
3.8 S
秋季时间：
22 ns
产品类别：
MOSFET
上升时间：
40 ns
出厂包装数量：
5040
子类别：
MOSFET
典型关断延迟时间：
47 ns
典型的开启延迟时间：
12 ns
单位重量：
0.012102 oz
Tags
FCU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in IPAK
***ark
MOSFET Transistor, N Channel, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
*** Source Electronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 600V 4A IPAK
***r Electronics
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ment14 APAC
MOSFET, N CH, 600V, 4A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4A; Package / Case:IPAK; Power Dissipation Pd:70W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***et
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251
***ineon SCT
Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7, PG-TO251-3, RoHS
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK
***ical
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK Tube
***ark
TUBE / NFET DPAK 600V 5.9A 900
型号 制造商 描述 库存 价格
FCU5N60TU
DISTI # V79:2366_17786152		ON SemiconductorSF1 600V 950MOHM E IPAK3070
  • 2500:$0.5582
  • 1000:$0.5914
  • 500:$0.7549
  • 100:$0.8613
  • 10:$1.1232
  • 1:$1.4600
FCU5N60TU
DISTI # V36:1790_06359175		ON SemiconductorSF1 600V 950MOHM E IPAK0
    FCU5N60TU
    DISTI # FCU5N60TU-ND    		ON SemiconductorMOSFET N-CH 600V 4.6A I-PAK
    RoHS: Compliant
    Min Qty: 5040
    Container: Tube    		Limited Supply - Call
    • 5040:$0.6042
    FCU5N60TU
    DISTI # 26637322    		ON SemiconductorSF1 600V 950MOHM E IPAK5040
    • 5040:$0.4557
    FCU5N60TU
    DISTI # 26115035    		ON SemiconductorSF1 600V 950MOHM E IPAK3070
    • 2500:$0.6001
    • 1000:$0.6358
    • 500:$0.8115
    • 100:$0.9259
    • 17:$1.2074
    FCU5N60TU
    DISTI # FCU5N60TU    		ON SemiconductorTrans MOSFET N-CH 600V 4.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FCU5N60TU)
    RoHS: Compliant
    Min Qty: 70
    Container: Tube    		Americas - 5040
    • 700:$0.4429
    • 350:$0.4539
    • 210:$0.4599
    • 140:$0.4659
    • 70:$0.4689
    FCU5N60TU
    DISTI # FCU5N60TU    		ON SemiconductorTrans MOSFET N-CH 600V 4.6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FCU5N60TU)
    RoHS: Compliant
    Min Qty: 582
    Container: Bulk    		Americas - 0
    • 5820:$0.5299
    • 2910:$0.5439
    • 1746:$0.5509
    • 1164:$0.5579
    • 582:$0.5619
    FCU5N60TU
    DISTI # 20M1157    		ON SemiconductorSF1 600V 950MOHM E IPAK / TUBE0
    • 10000:$0.5850
    • 2500:$0.6120
    • 1000:$0.6660
    • 500:$0.7990
    • 100:$0.9120
    • 10:$1.1300
    • 1:$1.3900
    FCU5N60TU.
    DISTI # 96AC0001    		ON SemiconductorSF1 600V 950MOHM E IPAK ROHS COMPLIANT: YES0
    • 700:$0.4470
    • 350:$0.4580
    • 142:$0.4640
    • 72:$0.4710
    • 1:$0.4740
    FCU5N60TU
    DISTI # 512-FCU5N60TU    		ON SemiconductorMOSFET 600V N-Channel MOSFET
    RoHS: Compliant    		4970
    • 1:$1.3500
    • 10:$1.1500
    • 100:$0.8870
    • 500:$0.7840
    • 1000:$0.6190
    • 2500:$0.5900
    FCU5N60TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		2588
    • 1000:$0.5700
    • 500:$0.6000
    • 100:$0.6200
    • 25:$0.6500
    • 1:$0.7000
    FCU5N60TU
    DISTI # 1324781    		ON Semiconductor 
    RoHS: Compliant    		0
    • 1000:$1.0200
    • 500:$1.3000
    • 100:$1.4700
    • 10:$1.9100
    • 1:$2.2400
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    可用性
    库存:
    Available
    订购:
    1987
    输入数量:
    FCU5N60TU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.35
    US$1.35
    10
    US$1.15
    US$11.50
    100
    US$0.89
    US$88.70
    500
    US$0.78
    US$392.00
    1000
    US$0.62
    US$619.00
    2500
    US$0.59
    US$1 475.00
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