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FGA3060ADF

FGA3060ADF
Mfr. #:
FGA3060ADF
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V proliferation PFC home application
生命周期:
制造商新产品。
数据表:
FGA3060ADF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGA3060ADF 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-3PN
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.8 V
最大栅极发射极电压：
30 V
25 C 时的连续集电极电流：
60 A
Pd - 功耗：
176 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
FGA3060ADF
打包：
管子
连续集电极电流 Ic 最大值：
60 A
品牌：
安森美半导体/飞兆半导体
栅极-发射极漏电流：
400 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
单位重量：
0.225789 oz
Tags
FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 60A 176000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 600 V, 30 A Field Stop Trench
*** Electronic Components
IGBT Transistors 600V proliferation PFC home application
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
***ark
Fs3Tigbt To3Pn 20A 600V Rohs Compliant: Yes
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Vce(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability.
***ical
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
STGP20NC60V Series 600 V 3 A Flange Mount Very Fast IGBT - TO-220
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
STGP20NC60V,IGBT N-ch 600V 30A,TO220-3
***ark
N CHANNEL IGBT, 60V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ark
Igbt, High Speed, 600V, 60A, To-247A
***nell
IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
***ure Electronics
IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***el Electronic
In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
***ure Electronics
Insulated Gate Bipolar Transistor Through Hole IGBT - TO-220-3
***itex
Transistor; IGBT; 600V; 60A; 160W; -55+150 deg.C; THT; TO220
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
***nell
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
型号 制造商 描述 库存 价格
FGA3060ADF
DISTI # V99:2348_14141228		ON SemiconductorFS3 600V PROLIFERATION FOR PFC450
  • 1000:$1.6640
  • 500:$1.9160
  • 250:$2.1570
  • 100:$2.2950
  • 10:$2.6700
  • 1:$3.4859
FGA3060ADF
DISTI # FGA3060ADF-ND		ON SemiconductorIGBT 600V 60A 176W TO-3PN
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$1.6556
FGA3060ADF
DISTI # 25887474		ON SemiconductorFS3 600V PROLIFERATION FOR PFC450
  • 4:$3.4859
FGA3060ADF
DISTI # FGA3060ADF		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA3060ADF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$0.9729
  • 2700:$0.9969
  • 1800:$1.0099
  • 900:$1.0229
  • 450:$1.0299
FGA3060ADF
DISTI # FGA3060ADF		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3PN Tube - Bulk (Alt: FGA3060ADF)
Min Qty: 187
Container: Bulk		Americas - 0
  • 935:$1.5900
  • 1870:$1.5900
  • 187:$1.6900
  • 374:$1.6900
  • 561:$1.6900
FGA3060ADF
DISTI # FGA3060ADF		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3PN Tube (Alt: FGA3060ADF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Asia - 0
  • 22500:$1.2925
  • 11250:$1.3140
  • 4500:$1.3593
  • 2250:$1.4079
  • 1350:$1.4600
  • 900:$1.5162
  • 450:$1.5768
FGA3060ADF
DISTI # FGA3060ADF		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin TO-3PN Tube (Alt: FGA3060ADF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.0589
  • 500:€1.0749
  • 100:€1.0919
  • 50:€1.1099
  • 25:€1.2219
  • 10:€1.4299
  • 1:€1.7479
FGA3060ADF
DISTI # 01AC8661		ON SemiconductorFS3TIGBT TO3PN 20A 600V / TUBE0
  • 500:$1.5700
  • 250:$1.6200
  • 100:$1.9400
  • 50:$2.2400
  • 25:$2.3800
  • 10:$2.7200
  • 1:$3.1400
FGA3060ADF.
DISTI # 23AC5250		Fairchild Semiconductor CorporationFS3TIGBT TO3PN 20A 600V ROHS COMPLIANT: YES0
  • 4500:$1.3900
  • 1:$1.4900
FGA3060ADF
DISTI # 512-FGA3060ADF		ON SemiconductorIGBT Transistors 600V proliferation PFC home application
RoHS: Compliant		637
  • 1:$3.1900
  • 10:$2.7100
  • 100:$2.3500
  • 250:$2.2300
  • 500:$2.0000
  • 1000:$1.6900
  • 2500:$1.6000
  • 5000:$1.5400
FGA3060ADFFairchild Semiconductor Corporation 
RoHS: Not Compliant		368
  • 1000:$1.1600
  • 500:$1.2200
  • 100:$1.2700
  • 25:$1.3200
  • 1:$1.4300
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可用性
库存:
637
订购:
2620
输入数量:
FGA3060ADF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$3.19
US$3.19
10
US$2.71
US$27.10
100
US$2.35
US$235.00
250
US$2.23
US$557.50
500
US$2.00
US$1 000.00
1000
US$1.69
US$1 690.00
2500
US$1.60
US$4 000.00
5000
US$1.54
US$7 700.00
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