OMO ElectronicOMO Electronic
Expand menu
您好，登录我的帐户
0 购物车

APT7M120S

APT7M120S
Mfr. #:
APT7M120S
制造商:
Microchip / Microsemi
描述:
MOSFET FG, MOSFET, 1200V, TO-268
生命周期:
制造商新产品。
数据表:
APT7M120S 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT7M120S DatasheetAPT7M120S Datasheet (P4)
ECAD Model:
产品属性
属性值
制造商：
微芯片
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
D3PAK-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
1.2 kV
Id - 连续漏极电流：
8 A
Rds On - 漏源电阻：
1.5 Ohms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
80 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
335 W
配置：
单身的
频道模式：
增强
打包：
管子
晶体管类型：
1 N-Channel
品牌：
微芯片/Microsemi
正向跨导 - 最小值：
8 S
秋季时间：
13 ns
产品类别：
MOSFET
上升时间：
8 ns
出厂包装数量：
1
子类别：
MOSFET
典型关断延迟时间：
45 ns
典型的开启延迟时间：
14 ns
单位重量：
1.340411 oz
Tags
APT7, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***N
    A***N
    RU

    Good bridges work! Fast shipping!

    2019-01-11
    M***v
    M***v
    RU

    Came in safe and sound, thanks to the seller

    2019-05-08
    V***i
    V***i
    UA

    Delivery-22 days. i recommend the seller.

    2019-02-15
    I***v
    I***v
    RU

    Leds quality work well, product quality will show time.

    2019-05-31
***ical
Trans MOSFET N-CH Si 1.2KV 8A 3-Pin(2+Tab) D3PAK Tube
***et
Power MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268
*** Stop Electro
Power Field-Effect Transistor, 7A I(D), 1200V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
N-Channel Power MOSFET, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
***et
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***ark
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain
***nell
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.221ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***icroelectronics
N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
***ponent Sense
power mosfet 950V 30V-TRANSISTOR FET N-C
***ical
Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) H2PAK T/R
***enic
950V 6A 110W 1.25´Î@10V3A 5V@100Ã×A N Channel H2PAK-2 MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 6A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 950V, 6A, 150DEG C, 110W; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 950V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak
*** Electronic Components
MOSFET N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 950 V 0.8 Ohm Surface Mount Power MOSFET - D2PAK-3
***r Electronics
Power Field-Effect Transistor, 8A I(D), 950V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
型号 制造商 描述 库存 价格
APT7M120S
DISTI # APT7M120S-ND		Microsemi CorporationMOSFET N-CH 1200V 8A D3PAK
RoHS: Compliant
Min Qty: 79
Container: Bulk		Temporarily Out of Stock
  • 79:$6.6911
APT7M120S
DISTI # APT7M120S		Microchip Technology IncPower MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268 - Rail/Tube (Alt: APT7M120S)
RoHS: Compliant
Min Qty: 79
Container: Tube		Americas - 0
  • 790:$3.9900
  • 395:$4.0900
  • 237:$4.1900
  • 158:$4.2900
  • 79:$4.4900
APT7M120S
DISTI # 494-APT7M120S		Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant		75
  • 1:$9.2500
  • 5:$8.8900
  • 10:$8.5600
  • 25:$7.8600
  • 50:$7.5800
  • 100:$7.3100
  • 250:$6.7100
  • 500:$6.4700
  • 1000:$6.2400
图片 型号 描述
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12

 Rectifiers HVM 350mA 12000v
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12-111

 Rectifiers HVM 350mA 12000v
NLV32T-330J-EF

Mfr.#: NLV32T-330J-EF

OMO.#: OMO-NLV32T-330J-EF-TDK

 Fixed Inductors 33uH 5.6ohms 70mA Wound Ferrite
可用性
库存:
75
订购:
2058
输入数量:
APT7M120S的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$9.25
US$9.25
5
US$8.89
US$44.45
10
US$8.56
US$85.60
25
US$7.86
US$196.50
50
US$7.58
US$379.00
100
US$7.31
US$731.00
250
US$6.71
US$1 677.50
500
US$6.47
US$3 235.00
1000
US$6.24
US$6 240.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
从...开始
最新产品
  • LAN9252 EtherCAT Slave Controller
    LAN9252 EtherCAT Slave Controller
    The LAN9252 from Microchip Technology is a 2/3-port EtherCAT slave controller that comes with dual integrated Ethernet PHYs that each contain a full-duplex 100BASE-TX transceiver and supports 100
  • PG164100 Snap Debugger/Programmer
    PG164100 Snap Debugger/Programmer
    Microchip's PG164100 MPLAB® Snap In-Circuit Debugger/Programmer allows affordable, fast, and easy debugging and programming.
  • PIC32MZ EF Curiosity Development Board
    PIC32MZ EF Curiosity Development Board
    Microchip PIC32MZ EF Curiosity development board includes an integrated programmer / debugger and requires no additional hardware to get started.
  • Compare APT7M120S
    Compare APT7M120S
    APT7 vs APT70GR120B2 vs APT70GR120J
  • PIC24F 16-bit Microcontroller
    PIC24F 16-bit Microcontroller
    Microchip's PIC24F 16-bit microcontroller features an integrated hardware crypto module and eXtreme low power.
  • Curiosity Development Board
    Curiosity Development Board
    Microchip's fully integrated, 8-bit development platform for first-time users, designers, and those requiring a feature-rich rapid prototyping board.
More Newest Products
Top